Aixtron Ag

Aixtron, Inc.

Aixtron Se

Johannes Käppeler

Gerhard Karl Strauch

Holger Jürgensen

Holger Jurgensen

Martin Dauelsberg

Gerd Strauch

Jan Mulder

Francisco Ruda Y Witt

Marcel Kollberg

Walter Franken

Adam Boyd

Markus Gersdorff

Markus Reinhold

Frank Wischmeyer

Bernd Schulte

Olivier Feron

Dietmar Schmitz

Conor Martin

Victor Saywell

Florenz Kittel

The invention relates to a CVD reactor having a process chamber () and a substrate holder support () arranged therein, said support comprising at least one bearing surface (), wherein a plurality of gas inlet lines () open out into the bearing surface ('). The CVD reactor further has a substrate holder (), the back side thereof facing the bearing surface (&#x2032;), wherein the gases fed through the gas inlet lines () into the space between the bearing surface (&#x2032;) and back side form a gas cushion () supporting the substrate holder (). According to the invention, the gas cushion comprises a plurality of zones (A, C) that each can be fed through an associated gas inlet line () and that are separated from each other by a means () preventing gas exchange between the zones (A, C). At least one inner zone (C) is associated with a gas discharge line (), via which the gas fed into the inner zone (C) by way of the inlet line () can be discharged. Gases having different heat conduction properties are fed into the zones.

CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones

The invention relates to a device for coating substrates having a process chamber () disposed in a reactor housing and a two-part, substantially cup-shaped susceptor () disposed therein, forming an upper susceptor part () with the cup floor thereof having a flat plate (') and a lower susceptor part () with the cup side walls thereof, the outer side () of the plate (&#x2032;) of the upper susceptor part () facing upwards toward the process chamber () and forming a contact surface for at least one substrate, the upper susceptor part () contacting a front edge (&#x2033;) of the lower susceptor part () at the edge of said upper susceptor part (), the lower susceptor part () being supported by a susceptor carrier (), and heating zones (A, B, C) for heating the upper susceptor part () being disposed below the plate (&#x2032;). An advantageous refinement of the invention proposes that the upper susceptor part () be removable from the process chamber () separately from the lower susceptor part (), and the joint () between the edge of the upper susceptor part () and the front edge (&#x2033;) of the lower susceptor part () be formed as a heat conduction barrier.

Device for coating substrates disposed on a susceptor

The invention relates to a CVD reactor having a plurality of rotary tables () supported on a rotationally driven susceptor () on dynamic gas cushions (), wherein each gas cushion () is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (), can be varied by an individual actuator (). The invention further comprises a carrier (), carrying the susceptor () and rotating with the susceptor (). A common gas supply line () ending in the carrier () is key to the invention and provides the actuators () arranged on the carrier () with the gas that forms the gas flow.

Device for the temperature control of the surface temperatures of substrates in a CVD reactor

The invention relates to an apparatus for the deposition of one or more layers on a substrate (), which comprises a process chamber () which is arranged in a reactor housing () and has a heatable bottom () on which the substrate rests and a lid () extending parallel to the bottom () and also a gas inlet facility () for introduction of process gases. The distance (H) between the process chamber lid () and the process chamber bottom () can be reduced to virtually zero. A cooling apparatus () by means of which the process chamber lid () is cooled in the process position during deposition of the layers is provided above the process chamber lid (), with the distance between the cooling apparatus () and the process chamber lid () increasing as the distance (H) between the process chamber lid () and the process chamber bottom () is reduced.

CVD reactor having a process-chamber ceiling which can be lowered

The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (), extending in a vertical direction, of a gas inlet member (), fixed in place with respect to a reactor housing, into a process chamber (), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (), protruding into the center of the rotationally symmetrical process chamber (), and flows in a radially outward direction via a base (') of the process chamber (), extending in a horizontal direction and rotating about the center, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (&#x2032;) of the gas inlet member () protrudes into a pot-like recess () and an end portion (&#x2032;) of a gas deflecting face () is flush with the base (&#x2032;).

CVD reactor comprising a gas inlet member

The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber () consisting of a number of wall elements (), said wall elements () being electroconductive and placed end-to-end, thus forming contacts (&#x2033;); a reactor housing () enclosing the wall elements () of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements () of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe () is implanted between the reactor housing () and the walls () of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls () of the treatment chamber.

CVD reactor with RF-heated process chamber

A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.

Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates

A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

Coating method

The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.

Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

CVD coating device

A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.

Reaction chamber with at least one HF feedthrough

The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.

Growing community of inventors

Würselen, Germany

Johannes Käppeler