Aixtron Ag

Aixtron Se

Johannes Kaeppeler

Gerhard Karl Strauch

Martin Dauelsberg

Michael Heuken

Gerd Strauch

Rune Berge

Markus Reinhold

Frank Wischmeyer

Bernd Schulte

Holger Juergensen

John Tomlinson Mullins

Victor Saywell

Martin Conor

Rainer Beccard

John Trevor Mullins

The invention relates to a method for depositing especially crystalline layers on one or more, especially crystalline substrates in a process chamber by means of reaction gases that are introduced into the process chamber and that undergo especially pyrolitic reactions. The device comprises a support plate, heated from one side, on which at least one compensation plate rests while forming a horizontal gap. In order to be better able to influence the surface temperature, the gap height of the horizontal gap can be varied or is locally variable in order to influence the local surface temperature of the compensation plate.

CVD coating device

The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body comprising a gas-leak surface facing the substrate holder and provided with a plurality of essentially evenly distributed outlets for process gases to be introduced into the process chamber. In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors arranged to the rear of the outlets and respectively aligned with an associated outlet.

CVD reactor comprising a photodiode array

A device for loading at least one substrate into a process chamber of a coating unit and unloading the at least one substrate therefrom by means of a gripper of a handling machine. The device includes a loading plate which can be gripped by the gripper and embodies a storage place for each at least one substrate, the storage place being formed by an edge of an opening that is assigned to each substrate. The device also includes a substrate holder that is provided with a pedestal-type substrate support which is adapted to the loading plate and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

Loading and unloading apparatus for a coating device

The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder. According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber, and it enters the process chamber at the edge of the substrate holder directly thereabove and flows parallel to the substrate holder surface.

Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned

The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.

Inlet system for an MOCVD reactor

The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated susceptor. The first process gas flows through a central line with a central outlet opening and the second process gas flows through a line which is peripheral thereto and which has a peripheral outlet opening that is formed by a gas-permeable gas outlet ring. Said gas outlet ring surrounds a ring-shaped pre-chamber. The invention provides that in order to avoid a parasitic deposition in the area of the peripheral outlet opening, the end section of the gas outlet ring that faces towards the susceptor or the radially outer section of the surface of the gas outlet mechanism surrounding the central outlet opening is cooled by the second process gas according to a truncated cone or revolution hyperboloid shape of a gas guiding surface formed by the pre-chamber back wall.

Gas-admission element for CVD processes, and device

The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH, AsHor PHinto the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.

Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates

The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

CVD reactor with graphite-foam insulated, tubular susceptor

The invention relates to a method for controlling the surface temperatures of substrates arranged on substrate supports borne by a substrate support carrier on dynamic gas cushions in a processing chamber of a CVD-reactor. The aim of the invention is to reduce or adjust the temperature variations. According to the invention, an average surface temperature value is calculated, being measured in a particularly optical manner, and the level of the gas cushions is regulated by varying the individually controlled gas flow producing the gas cushions in such a way that the variations of the measured surface temperatures in relation to the average value lies within a predetermined temperature window.

Growing community of inventors

Wuerselen, Germany

Johannes Kaeppeler