At&t Bell Laboratories

At&t Technologies, Inc.

Joel M Cook

Daniel L Flamm

Vincent Michael Donnelly, Jr

Dale E Ibbotson

John A Mucha

Bernard C Seiler

Edward H Mayer

The use of a particular configuration in a downstream etching apparatus and technique allows the rapid and economical treatment of a plurality of semiconductor substrates. Additionally, through the use of this technique, global and localized loading effects are avoided. The downstream apparatus utilizes a discharge region that is relatively large compared to the volume occupied by the substrates. Additionally, the concentration of the etchant species in the effluent is maintained at a level that is of the same order as that produced in the discharge region.

Downstream apparatus and technique

A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.

Etching techniques

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Union Township, NJ, United States of America

Joel M Cook