Intel Corporation

Joe F Walczyk

Pooya Tadayon

Feras Eid

Ronald Michael Kirby

Youngseok Oh

Mark T Bohr

Srikant Nekkanty

Paul J Diglio

Weihua Tang

Abram M Detofsky

Mohanraj Prabhugoud

Todd R Coons

Erkan Acar

Michael L Rutigliano

Jin Yang

Justin Michael Huttula

Feroz Mohammad

Morten S Jensen

Marco Aurelio Cartas Ayala

Andrew J Hoitink

Debendra Mallik

Chia-Pin Chiu

Saikumar Jayaraman

Zhichao Zhang

Michael C Ryan

James G Maveety

Chandra Mohan Jha

John C Johnson

Xavier Francois Brun

Zhimin Wan

Sergio Antonio Chan Arguedas

Shankar Devasenathipathy

Kuang C Liu

Todd P Albertson

Steven A Klein

Ting Zhong

Shrenik Kothari

Akhilesh P Rallabandi

Evan M Fledell

James R Hastings

Dinia P Kitendaugh

Christopher Del Barga

Tanner Schulz

An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

Hybrid backside thermal structures for enhanced ic packages

Embodiments described herein may be related to apparatuses, processes, and techniques related to micro socket arrays with fine pitch contacts to electrically couple dies, in particular photonics dies, within multichip photonics packages. In embodiments, micro socket arrays may be used in conjunction with multichip module packaging that include silicon photonic engines and optical fiber modules on the same package. In embodiments, these packages may also use a system on chip (SOC), as well as fine pitch die to die connections, for example an EMIB, that may be used to connect a PIC with an SOC. Other embodiments may be described and/or claimed.

Micro socket electrical couplings for dies

A contiguous integrated heat spreader suitable for an integrated circuit (IC) die package. Heat spreader material may be deposited with a high throughput additive manufacturing (HTAM) technique directly upon a surface of an IC die, and over a portion of a package substrate beyond an edge of the IC die. The contiguous heat spreader may have high thermal conductivity and offer low thermal resistance in absence of any intervening thermal interface material (TIM). The contiguous heat spreader may span multiple IC die and accommodate different die heights. The heat spreader may be contiguous with multiple die. Heat spreader material may be absent where thermal breaks within the heat spreader are advantageous.

Integrated circuit die packages including a contiguous heat spreader

Embodiments described herein may be related to apparatuses, processes, and techniques related to incorporating photonics integrated circuitry into a base die, the base die including an optical interconnect at a bottom of the base die to transmit and to receive light signals from outside the base die. The top of the base die includes one or more electrical connectors that are electrically coupled with the photonics integrated circuitry. The base die may be referred to as the photonics die. A system-on-a-chip (SOC) may be electrically coupled with and stacked onto the top of the photonics die. Other embodiments may be described and/or claimed.

Stackable photonics die with direct optical interconnect

A hybrid thermal interface material (TIM) suitable for an integrated circuit (IC) die package assembly. The hybrid TIM may include a heat-spreading material having a high planar thermal conductivity, and a supplemental material having a high perpendicular thermal conductivity at least partially filling through-holes within the heat-spreading material. The hybrid TIM may offer a reduced effective spreading and vertical thermal resistance. The heat-spreading material may have high compressibility (low bulk modulus or low hardness), such as a carbon-based (e.g., graphitic) material. The supplemental material may be of a suitable composition for filling the through-hole. The heat-spreading material, once compressed by a force applied through an IC die package assembly, may have a thickness substantially the same as that of the supplemental material such that both materials make contact with the IC die package and a thermal solution.

Hybrid thermal interface material (TIM) with reduced 3D thermal resistance

An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a backside metallization layer on the backside surface of the integrated circuit device, wherein the backside metallization layer comprises a bond layer on the backside surface of the integrated circuit device, a high thermal conductivity layer on the bond layer, and a cap layer on the high thermal conductivity layer. The bond layer may be a layered stack comprising an adhesion promotion layer on the backside of the integrated circuit device and at one least metal layer. The high thermal conductivity layer may be an additively deposited material having a thermal conductivity greater than silicon, such as copper, silver, aluminum, diamond, silicon carbide, boron nitride, aluminum nitride, and combinations thereof.

Additively manufactured structures for heat dissipation from integrated circuit devices

Embodiments described herein may be related to apparatuses, processes, and techniques related to active optical plugs used to cover optical connectors of a photonics package to protect the connectors. The active optical plugs may also be used to perform testing of the photonics package, including generating light to be sent to the photonics package and to detect light received from the photonics package as part of the test protocol. This allows testing the optical connection and the photonics package, without exposing the optical connections of the package to damage from dust or physical contact. Other embodiments may be described and/or claimed.

Active optical plug to optically or electrically test a photonics package

Techniques and mechanisms for coupling packaged devices with a socket device. In an embodiment, the socket device comprises a socket body structure and conductors extending therethrough. A pitch of the conductors is in a range of between 0.1 millimeters (mm) and 3 mm. First and second metallization structures also extend, respectively, from opposite respective sides of the socket body structure. In the socket body structure, a conductive shield structure, electrically coupled to the first and second metallization structures, substantially extends around one of the conductors. For each of the first and second metallization structures, a vertical span of the metallization structure is in a range of between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure.

Dual-sided socket device with corrugation structures and shield structures

Hybrid backside thermal structures for enhanced IC packages

An interconnect that has an electrically conductive layer, where a first and second insulator layers are coupled with the conductive layer. A region of the conductive layer includes an opening of a portion of the first insulator layer the second insulator layer that are adjacent to the region. An electrical connector of a first device is electrically coupled to a portion of the region on a first side of the conductive layer and an electrical conductor of a second device is electrically coupled with a portion of the region on the second side. Also, an interconnect coupled with a substrate that includes a cylinder extending from a side of the substrate with a plate coupled at the end of the cylinder with an opening that includes two or more tabs of the plate extending into the opening to receive a connector.

Electrical connector with insulated conductive layer

A coaxial wire interconnect architecture and associated methods are described. In one example, the coaxial wire interconnect architecture is used in a test socket interconnect array. Flexible bends are formed in one or more of the coaxial wire interconnects to provide compliant connections to an electronic device during testing.

Micro-coaxial wire interconnect architecture

A micronozzle assembly, comprising a reservoir, an array of structures comprising micronozzles, a porous structure positioned between the reservoir and the array, and an electrode within the reservoir, wherein the electrode comprises any of a mesh, a frame along the perimeter of the cavity of the reservoir, or a rod extending into a cavity of the reservoir.

Massively-parallel micronozzle array for direct write electrodeposition of high-density microstructure arrays

An apparatus for testing integrated circuits (ICs) , includes a first thermal contact structure having a first surface to interface with a heat source and an opposing second surface to interface with a device under test (DUT). A second thermal contact structure is above the first thermal contact structure and separated therefrom by a variable-resistance thermal interface (VRTI) structure operable to couple or decouple the first and second thermal contact structures from one another. The VRTI structure has a maximal thermal conductivity associated with a first state, and a minimal thermal conductivity associated with a second state.

Thermal switch for rapid thermal coupling and decoupling of devices under test

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the surface of the package substrate; and a cooling apparatus that may include a conductive base having a first surface and an opposing second surface, wherein the first surface of the conductive base is in thermal contact with the second surface of the die, and a plurality of conductive structures on the second surface of the conductive base, wherein an individual conductive structure of the plurality of conductive structures has a width between 10 microns and 100 microns.

Cooling apparatuses for microelectronic assemblies

Heat dissipation techniques include using metal features having one or more slanted or otherwise laterally-extending aspects. The metal features include, for example, tilted metal pillars, or metal bodies or fillets having an angled or sloping sidewall, or other metal features that extend both vertically and laterally. Such metal features increase the effective heat transfer area significantly by spreading heat in the in-plane (lateral) direction, in addition to the vertical direction. In some embodiments, slanted trenches are formed in photoresist/mold material deposited over a lower die, using photolithography and a multi-angle lens, or by laser drilling mold material deposited over the lower die. The trenches are then filled with metal. In other embodiments, metal features are printed on the lower die, and then molding material is deposited over the printed features. In any such cases, heat is conducted from a lower die to an upper die and/or an integrated heat spreader.

Sloped metal features for cooling hotspots in stacked-die packages

Growing community of inventors

Tigard, OR, United States of America

Joe F Walczyk