Leybold Aktiengesellschaft

Jochen Ritter

Rainer Gegenwart

Manfred Arnold

Helmut Stoll

Ingo Hussla

Sonja Noll

Guido Blang

Michael Scherer

Roland Gesche

Klaus Michael

Hans-Dieter Wurczinger

Karl-Heinz Kretschmer

Norbert Weimer

Oliver Burkhardt

The invention relates to an arrangement for coating or etching substrates. In this arrangement an HF substrate bias voltage is generated without contact. For this purpose plasma sources are equipped with a bias pot which is disposed at the dark space distance from a substrate carrier and acted upon by HF. Depending on the source used, the bias pot can be constructed as an independent unit or as a component part of the source connected so as to be conducting-for example as an HF magnetron. Via this coupled-in HF power the dc potential on the carrier, and consequently the ion bombardment on the substrate, can be set specifically.

Arrangement for coating or etching substrates

The invention relates to an electrode configuration for a device for generating a plasma. RF is coupled contactlessly via a capacitive coupling electrode disposed at the dark space distance into a carrier backside of a coating installation. Dark space shields on the coating side define the plasma zone and prevent the formation of parasitic plasmas. HF substrate bias voltage on the moving substrate carrier is achieved with a defined plasma zone and the development of parasitic plasmas is avoided.

Arrangement for coating substrates

The method calls for introducing an inert gas into a tank where a high frequency energy source is applied to internal electrodes for the ignition of a plasma within the tank. The sensor surface is cleaned by sputtering away impurities from the sensor surface by means of plasma particles striking the sensor surface. Next, a monomer containing silicon and a reactive gas are introduced into the tank with continuous throttling of the inert gas feed and maintenance of the plasma, while the electric power characteristics fed into the plasma are being controlled. This leads to the deposition on the sensor surface of a compound composed of particles from the monomer containing silicon and from the reactive gas.

Method for the surface passivation of sensors using an in situ sputter

Apparatus for thin-coating processes for the treatment of substrates (8) of large surface area using a plasma (6) which is excited by microwaves (M) and the latter are coupled from a source by means of a waveguide (1) consisting of at least one hollow conductor (1), as well as by means of a horn antenna, into a plasma chamber (5), the waveguide (W) having a substantially rectangular aperture, an area is provided at the end of the hollow conductor (Q) with a slit-like constriction (Q), a rectangular horn (2) adjoins this area, and a compensation area (3) is provided between the largest aperture of the rectangular horn (2), as well as of the plasma chamber (5).

Apparatus for thin-coating processes for treating substrates of great

A heated evaporator housing is provided at its inlet with an ultrasonic atomizer for reducing monomer to small droplets and a permeable porous body completely occupying a cross section of the housing between the inlet and the outlet. A vacuum pump and a reaction chamber for coating substrates are provided downstream of the outlet.

Apparatus for the evaporation of liquids

Particle source, especially for reactive ion etching and plasma-enhanced CVD processes in pass-through apparatus for the treatment of large-area substrates (4) having a container completely enveloping a first plasma (19), a magnetic field generator (8, 9, 10) which fulfills the electron-cyclotron resonance, a waveguide (15) connected to the container for the delivery of electromagnetic waves, preferably microwaves (17), for the production of the plasma (19), a coupling window (16) as well as a gas feeding system for supplying the plasma process with reactive, and, for example, inert gas, the first plasma (19) being enveloped by a plasma chamber (7), the interior spaces of the plasma chamber (7) and of the adjacent vacuum chamber (2) are connected to one another, an additional guard window (12) is situated in the plasma chamber (7) directly in front of the coupling window and has an approximately constant gap (13) between it and the chamber walls (7c, 7d), a separate feeding is performed of for example inert gas (11) into the space between coupling window (16) and guard window (12) and of reactive gas (6) between guard window (12) and substrate (4), and an intermediate plasma is ignitable between coupling window (16) and guard window (12).

Particle source, especially for reactive ionic etching and

Monomers containing silicon and oxygen which are liquid at room temperature and have a low vapor pressure are fed in a liquid state via a mass flow regulator to an evaporator provided with a body having capillary action where the liquid is evaporated by radiant heat. Evaporated monomer is fed to the reaction zone of a vacuum chamber where thin coatings are applied on substrates by chemical vapor deposition.

Method for the evaporation of monomers that are liquid at room

An evaporator chamber has an entry end with a conduit connected to the output of a mass flow regulator, an exit end connected to a vacuum, and a wall surface extending therebetween. A body having capillary action is disposed in the chamber and has one end connected to the conduit and a free surface spaced from the wall surface in line of sight thereof. Heating means for the wall surface heats the body radiantly and causes monomer carried thereby to evaporate.

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Laubach, Germany

Jochen Ritter