Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Carl Zeiss Sms Ltd.

Jochen Hetzler

Aksel Goehnermeier

Heiko Feldmann

Bernd Doerband

Wolfgang Singer

Michael Totzeck

Rolf Freimann

Helmut Beierl

Stefan Schulte

Frank Schillke

Hans-Michael Stiepan

Sebastian Fuchs

Hans-Juergen Mann

Susanne Beder

Hans Michael Stiepan

Karl-Heinz Schuster

Manfred Maul

Ulrich Wegmann

Ralf Mueller

Andras G Major

Norbert Kerwien

Gundula Weiss

Ralf Arnold

Frank Eisert

Matthias Dreher

Alexander Winkler

Joachim Schroeder

Susanne Toepfer

Holger Jennewein

Martin Scheid

Measurement method for interferometrically determining a shape of a test object () surface () includes arranging a first diffractive optical element () in an input wave () beam path, to generate a first test wave () with a wavefront that is adapted to a desired shape of the optical surface, detecting a first interferogram generated by the first test wave after interaction with the test object surface, arranging a different diffractive optical element () in the input wave beam path for generating a further test wave with a wavefront which is adapted to the desired shape of the optical surface, the first and the further diffractive optical elements differing in their respective diffraction structure configurations, capturing a further interferogram generated by the further test wave after interaction with the test object surface, and determining the surface shape of the test object by calculating the two interferograms.

Measurement method for interferometrically determining a surface shape

A diffractive optical element () for a test interferometer () measures a shape of an optical surface (). Diffractive shape measuring structures () are arranged on a used surface () of the element and generate a test wave () irradiating the surface when the element is arranged in the interferometer. At least one test field () several profile properties of test structures contained in the test field. The profile properties characterize a profile line of the test structures extending transversely with respect to the used surface and include a flank angle of the profile line, a profile depth and a depth of a microtrench in a bottom region of a trench-shaped profile of the test structures. The test field is arranged at one location of the used surface instead of the diffractive shape measuring structures such that the test field is surrounded by several diffractive shape measuring structures.

Diffractive optical element for a test interferometer

The invention relates to a method for correcting a telecentricity error of an imaging device for semiconductor lithography having an illumination unit, an imaging optical unit, and a filter for correcting the telecentricity error, having the following method steps: The invention furthermore relates to an imaging device for semiconductor lithography, which is configured for carrying out the method.

Method and device for correcting a telecentricity error of an imaging device

A device and a method for characterizing the surface shape of a test object. The device for characterizing the surface shape of a test object has a test arrangement () for determining the surface shape of a test object () using a test wave. The test wave has a wavefront generated by diffraction at a diffractive optical element. The device additionally has a first vacuum chamber () and a second vacuum chamber (), wherein the second vacuum chamber () has a magazine for mounting at least two diffractive optical elements ().

Device and method for characterizing the surface shape of a test object

A method for calibrating a measuring device () for interferometrically determining a shape of an optical surface () of an object under test (). The measuring device includes a module plane () for arranging a diffractive optical test module () which is configured to generate a test wave () that is directed at the optical surface and that has a wavefront at least approximately adapted to a target shape () of the optical surface. The method includes: arranging a diffractive optical calibration module () in the module plane for generating a calibration wave (), acquiring a calibration interferogram () generated using the calibration wave in a detector plane () of the measuring device, and determining a position assignment distribution () of points () in the module plane to corresponding points () in the detector plane from the acquired calibration interferogram.

Method for calibrating a measuring apparatus

A compensation optical unit () for a measurement system () for determining a shape of an optical surface () of a test object () by interferometry generates a measuring wave (), directed at the test object, with a wavefront that is at least partly adapted to a target shape of the optical surface from an input wave (). The unit includes first () and second () optical elements disposed in a beam path of the input wave. The second optical element is a diffractive optical element configured to split the input wave into the measuring wave and a reference wave () following an interaction with the first optical element. At least 20% of a refractive power of the entire compensation optical unit is allotted to the first optical element, and this allotted refractive power has the same sign as the refractive power of the entire compensation optical unit.

Compensation optical system for an interferometric measuring system

A measurement apparatus () for determining a shape of an optical surface. An illumination module () produces an illumination wave (), an interferometer () splits the wave into a test wave (), which is directed onto the optical surface, and a reference wave (). The relative tilt between the waves produces a multi-fringe interference pattern () in a detection plane () of the interferometer when the waves are superposed. A pupil plane () of the illumination module is arranged in a Fourier plane of the detection plane and the illumination module is configured to produce the illumination wave so that the intensity distribution thereof in the pupil plane includes at least one spatially isolated and contiguous surface region () such that a rectangle () with the smallest possible area fitted to the surface region or the totality of surface regions has an aspect ratio of at least 1.5:1.

Measuring device for interferometric determination of a shape of an optical surface

A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system () of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M; M; M; M, M) of the optical elements.

Measuring method and measuring arrangement for an imaging optical system

A test appliance and a method for testing a mirror, e.g., a mirror of a microlithographic projection exposure apparatus. The test appliance has a computer-generated hologram (CGH), and a test can be carried out on at least a portion of the mirror by way of an interferometric superposition of a test wave that is directed onto the mirror by this computer-generated hologram and a reference wave. Here, the computer-generated hologram (CGH) () is designed in such a way that, during operation of the appliance, it provides a first test wave for testing a first portion of the mirror () by interferometric superposition with a reference wave in a first position of the mirror () and at least a second test wave for testing a second portion of the mirror () by interferometric superposition with a reference wave in a second position of the mirror ().

Test device and method for testing a mirror

A method for aligning a mirror of a microlithographic projection exposure apparatus, according to one formulation, involves: recording a first partial interferogram between a wave reflected at a first mirror segment () and a reference wave reflected at a reference surface (), recording a second partial interferogram between a wave reflected at a second mirror segment () and a reference wave reflected at the reference surface, determining a phase offset between the first partial interferogram and the second partial interferogram, and aligning the first mirror segment and the second mirror segment in relation to one another in accordance with the determined phase offset, so that the distance of the relevant mirror segments () from a respective predetermined, hypothetical surface in the direction of the respective surface normal is less than &#x3bb;/10 at each point on the mirror segments, where &#x3bb; denotes the operating wavelength of the mirror.

Method for aligning a mirror of a microlithographic projection exposure apparatus

A measurement arrangement () and an associated method for interferometrically determining the surface shape () of a test object () includes a light source () providing an input wave () and a diffractive optical element (). The diffractive optical element is configured to produce in each case by way of diffraction from the input wave a test wave (), which is directed at the test object () and has a wavefront that is adapted at least partially to a desired shape of the optical surface, and a reference wave (). The measurement arrangement furthermore includes a reflective optical element () that back-reflects the reference wave () and a capture device () that captures an interferogram produced by superposing the test wave after interaction with the test object and the back-reflected reference wave (), in each case after a further diffraction at the diffractive optical element in a capture plane ().

Interferometric measuring arrangement

A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Projection exposure tool for microlithography and method for microlithographic imaging

One aspect of the present invention relates to a mask inspection system for inspecting lithography masks, including a placement table for placing a lithography mask to be inspected, a first optical unit with a first beam path for examining structures of the lithography mask, and a second optical unit with a second beam path for establishing a position of at least one edge of the lithography mask. Here, the second beam path of the second optical unit passes at least once through a plane defined by the placement table.

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Aalen, Germany

Jochen Hetzler