Taiwan Semiconductor Manufacturing Comp. Ltd.

Jo-Fei Wang

Jong-I Mou

Tsun-Ching Lin

Hsiao-Lan Yeh

Chi-Ming Yang

Chun-Lin Louis Chang

Hsin-Hsien Wu

Jun-Lin Yeh

Chyi-Shyuan Chern

Jih-Jse Lin

Zin-Chang Wei

Ming-Yu Fan

Po-Feng Tsai

Chia-Tong Ho

Sheng-Wei Lee

Chang-Chu Yao

Gey-Fung Wei

Chia-Hsing Liao

Chang Chu Yao

A system, a method, and a non-transitory computer readable storage medium for controlling an ion implanter are disclosed herein. The system includes a sample module and a control module. The sample module is configured to generate a summarized value from process data of the ion implanter, and the process data correspond to a control parameter. The control module is configured to tune a control parameter, and the control module performs an ion implantation by releasing tools of the ion implanter in accordance with the control parameter when the summarized value meets a predetermined stability requirement.

System and method for controlling ion implanter

An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Multi-zone temperature control for semiconductor wafer

An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.

A number of air actuated valves are added to a conventional apparatus for treating semiconductor wafers with HMDS, hexamethyl-disilazane, vapor to improve the adhesion between the wafers and resist layers. These valves allow for automatic purging of the HMDS vapor from the pipes in the apparatus by dry nitrogen thereby preventing HMDS vapor condensation in the pipes which leads to contamination of the HMDS supply. The valve system prevents any backstreaming of nitrogen gas into the HMDS supply tank.

Method and apparatus for automatic purge of HMDS vapor piping

A method and apparatus for cleaning a spray stream nozzle employed in dispensing upon a photoexposed blanket photoresist layer formed over a semiconductor substrate a photoresist developer solution. There is first provided a spray stream nozzle having a minimum of one aperture formed therein. There is then provided through the spray stream nozzle a volume of a photoresist developer solution sufficient to develop a photoexposed blanket photoresist layer formed over a semiconductor substrate placed beneath the spray stream nozzle. Finally, there is provided then through the spray stream nozzle a volume of a solvent which is not susceptible to clogging the spray stream nozzle.

Method for cleaning a photoresist developer spray stream nozzle

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Hsin-Chu, Taiwan

Jo-Fei Wang