Fujitsu Corporation

Jiro Naito

Yasuhiro Yoneda

Toshisuke Kitakohji

Kenroh Kitamura

Kenro Kitamura

A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular structure, unsaturated hydrocarbon bonds inclusive of vinyl, allyl, cinnamoyl, or acryl double bonds or epoxy groups or halogen atoms and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound. A positive resist pattern is formed on a substrate by a process comprising coating the substrate with said resist composition, exposing the resist layer to radiation, and developing a resist pattern on the substrate by treatment with gas plasma.

Dry-developing resist composition

A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR1## in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of a silicone compound. A negative resist pattern can be formed on a substrate by a process comprising coating the substrate with the resist composition, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatment, and developing a resist pattern on the substrate by treatment with gas plasma.

Dry-developing negative resist composition

A negative type resist is provided for deep ultraviolet light lithography. This resist comprises a polymer of a diallyl ester of a dicarboxylic acid having a degree of dispersion of 3 or less, which is given by the ratio of a weight-average molecular weight Mw to a number-average molecular weight Mn. This deep UV resist can produce a fine detail resist pattern having a high resolution, and it has a high sensitivity to irradiating the coated film of the polymer on a substrate with deep UV light followed by development.

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Kanagawa, Japan

Jiro Naito