Novellus Systems Incorporated

Lam Research Corporation

Other

International Business Machines Corporation

Jingbin Feng

Zhian He

Shantinath Ghongadi

Steven T Mayer

Frederick Dean Wilmot

Jonathan David Reid

R Marshall Stowell

Hyungjun Hur

Cian Sweeney

Robert Marshall Stowell

Quan Ma

Quang Nguyen

Rezaul Karim

Seshasayee Varadarajan

Kousik Ganesan

Daniel Mark Dinneen

John B Alexy

Steve Taatjes

Robert Rash

Evan E Patton

Robert J Contolini

Eric G Webb

Edmund Minshall

John Owen Dukovic

Avishai Kepten

Ashwin Ramesh

Christopher M Bartlett

Marshall Stowell

Richard K Lyons

Mark T Winslow

Norman D Kaplan

David W Porter

Aaron Berke

Manish Ranjan

James Isaac Fortner

Jian Zhou

Ludan Huang

Aaron LaBrie

Andrew James Pfau

Andy McCutcheon

Jim Schall

David Mark Dinneen

Thomas Burke

Various embodiments include methods and apparatuses to moisturize a substrate prior to an electrochemical deposition process. In one embodiment, a method to control substrate wettability includes placing a substrate in a pre-treatment chamber, controlling an environment of the pre-treatment chamber to moisturize a surface of the substrate; and placing the substrate into a plating cell. Other methods and systems are disclosed.

Improving substrate wettability for plating operations

Methods and electroplating systems for controlling plating electrolyte concentration on an electrochemical plating apparatus for substrates are disclosed. A method involves: (a) providing an electroplating solution to an electroplating system; (b) electroplating the metal onto the substrate while the substrate is held in a cathode chamber of an electroplating cell of electroplating system; (c) supplying the make-up solution to the electroplating system via a make-up solution inlet; and (d) supplying the secondary electroplating solution to the electroplating system via a secondary electroplating solution inlet. The secondary electroplating solution includes some or all components of the electroplating solution. At least one component of the secondary electroplating solution has a concentration that significantly deviates from its target concentration.

Controlling plating electrolyte concentration on an electrochemical plating apparatus

Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.

Lipseals and contact elements for semiconductor electroplating apparatuses

A valve assembly used with a process chamber for depositing a film on a wafer. A valve body surrounds a bore and includes an inlet, a first outlet and a second outlet, at least one of them exiting into the process chamber. A piston includes a first section having a first flow path, and a second section having a second flow path. A linear motion actuator is adapted to couple with the piston and controls linear movement of the piston through the bore between a first position and a second position. In the first position, the first section of the piston is aligned with the inlet such that fluid flows to the first outlet via the first flow path. In the second position, the second section of the piston is aligned with the inlet such that fluid flows to the second outlet via the second flow path.

High flow multi-way piston valve for deposition systems

Apparatuses and methods are provided for depositing a metal layer on a wafer. A secondary weir is positioned at a region below the primary weir such that overflowed plating solution over the primary weir during electroplating flows in a substantially azimuthally uniform manner. Methods are provided for electroplating wafers by increasing flow rate between wafer processes while plating solution flows over a primary weir, remains in contact with the overflowing plating solution, and flows onto the secondary weir such that overflow is substantially azimuthally uniform.

Uniform flow behavior in an electroplating cell

Disclosed herein are lipseal assemblies for use in electroplating clamshells which may include an elastomeric lipseal for excluding plating solution from a peripheral region of a semiconductor substrate and one or more electrical contact elements. The contact elements may be structurally integrated with the elastomeric lipseal. The lipseal assemblies may include one or more flexible contact elements at least a portion of which may be conformally positioned on an upper surface of the elastomeric lipseal, and may be configured to flex and form a conformal contact surface that interfaces with the substrate. Some elastomeric lipseals disclosed herein may support, align, and seal a substrate in a clamshell, and may include a flexible elastomeric upper portion located above a flexible elastomeric support edge, the upper portion having a top surface and an inner side surface, the later configured to move inward and align the substrate upon compression of the top surface.

Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved. The consumable anode in one implementation has a plurality of through channels and at least one depression on its surface (e.g., a depression surrounding a channel) that is configured for registering with a protrusion on a component of an anode assembly, such as with a support plate. Fasteners may pass through the channels in the anode and attach it to a charge plate.

Front referenced anode

Disclosed herein are cups for engaging wafers during electroplating in clamshell assemblies and supplying electrical current to the wafers during electroplating. The cup can comprise an elastomeric seal disposed on the cup and configured to engage the wafer during electroplating, where upon engagement the elastomeric seal substantially excludes plating solution from a peripheral region of the wafer, and where the elastomeric seal and the cup are annular in shape, and comprise one or more contact elements for supplying electrical current to the wafer during electroplating, the one or more contact elements attached to and extending inwardly towards a center of the cup from a metal strip disposed over the elastomeric seal. A notch area of the cup can have a protrusion or an insulated portion on a portion of a bottom surface of the cup where the notch area is aligned with a notch in the wafer.

Plating cup with contoured cup bottom

Method for uniform flow behavior in an electroplating cell

The uniformity of electroplating a metal (e.g., copper) on a semiconductor wafer is improved by using an electroplating apparatus having a flow-shaping element positioned in the proximity of the semiconductor wafer, wherein the flow-shaping element is made of a resistive material and has two types of non-communicating channels made through the resistive material, such that the electrolyte is transported towards the substrate through both types of channels. The first type of channels is not perpendicular to the plane defined by a plating face of the substrate. The second type of channels is perpendicular to the plane defined by the plating face of the substrate. The channels of the first and second type are substantially spatially segregated. In one embodiment a plurality of channels of the first type are located in the central portion of the flow-shaping element and are surrounded by a plurality of channels of the second type.

Control of electrolyte flow dynamics for uniform electroplating

Growing community of inventors

Lake Oswego, OR, United States of America

Jingbin Feng