Texas Instruments Corporation

Jing S Shu

Wei William Lee

Gilbert L Varnell

John L Bartelt

Larry G Venable

Grover W Trytten

Johnny B Covington

Yvonne D Satterfield

Chien S Liang

An antistatic solution is disclosed to aid in the measurement of patterned resists by scanning electronic microscopes. The solution comprises a quaternary ammonium salt and a suitable solvent. The anion of the salt is selected from the group consisting of saccharinate, nitrate, sulfates, alkyl sulfates and alkoxylate. The four groups of the cation are selected from the group consisting of alkyl and alkyl derivatives.

Antistatic solution for microlithic measurement

A negative resist composition including a polymeric matrix material, a polymerizable monomer, and an onium salt radiation sensitive initiator. The monomer is polymerized by irradiating the resist with an e-beam, x-ray, or ultraviolet source and heating the exposed resist. The resist is developed by a dry etchant such as plasma or a reactive ion etchant.

Plasma developable negative resist compositions for electron beam, X-ray

A negative, high energy radiation resist based on styrene-allyl methacrylate copolymers and substitutional modifications thereof, yielding a linear copolymer with highly sensitive allyl pendant groups together with a thermally stable, solvent resistant backbone. This resist exhibits improved e-beam sensitivity without the attendant problems of swelling during development and flow during heat processing.

High gel rigidity, negative electron beam resists

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Plano, TX, United States of America

Jing S Shu