Kla Corporation

Jincheng Pei

Amnon Manassen

Ady Levy

Roie Volkovich

Lingyi Guo

Jinyan Song

Paul MacDonald

Paul Macdonald

A metrology target includes a first target structure formed within at least one of a first area and a third area of a first layer of a sample, where the first target structure comprises a plurality of first cells containing one or more first cell pattern elements; and a second target structure formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements.

Thick photo resist layer metrology target

A metrology system includes a controller communicatively coupled to one or more metrology tools. In another embodiment, the controller includes one or more processors configured to execute program instructions causing the one or more processors to receive one or more overlay metrology measurements of one or more metrology targets of the metrology sample from the one or more metrology tools; determine tilt from the one or more measurement overlay measurements; and determine one or more correctables for at least one of one or more lithography tools or the one or more metrology tools to adjust for the tilt, where the one or more correctables are configured to reduce an amount of tilt in the sample or overlay inaccuracy of the one or more overlay metrology measurements. The program instructions further cause the one or more processors to predict tilt with a simulator based on at least the determined tilt.

System and method for tilt calculation based on overlay metrology measurements

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Shanghai, China

Jincheng Pei