Samsung Electronics Co., Ltd.

Jin-young Yoon

Hyun-Woo Kim

Chan Soo Hwang

Hyun-woo Kim

Sang-Gyun Woo

Yool Kang

Seong-woon Choi

Jung-hwan Hah

Mitsuhiro Hata

Man-Hyoung Ryoo

Sang-Yoon Woo

Hyoung-hee Kim

Ju-hyung An

Yun-Kyeong Jang

A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.

Method of forming patterns and method of manufacturing integrated circuit device using the same

A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

Method of forming fine patterns of a semiconductor device

Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.

Gettering members, methods of forming the same, and methods of performing immersion lithography using the same

Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: 

Top coating composition for photoresist and method of forming photoresist pattern using same

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Seoul, South Korea

Jin-young Yoon