Samsung Electronics Co., Ltd.

Jin-sik Jung

Jae-Hyuck Choi

Hee-bom Kim

Sung-min Huh

Hoon Bae Kim

Seong-sue Kim

Dong-gun Lee

Woo-Sung Han

Hyung-ho Ko

Jong-Keun Oh

Han-Shin Lee

Hae-young Jeong

Soo-jung Kang

A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.

System for monitoring haze of a photomask

A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

Photomask including ion trapping layer and method of manufacturing semiconductor device using the photomask

A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

Binary photomask having a compensation layer

Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.

Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method

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Seoul, South Korea

Jin-sik Jung