Cheil Industries Inc.

Lbsemicon Co., Ltd.

Cheil Industrial, Inc.

Jin Kuk Lee

Dong Seon Uh

Chang Il Oh

Jong Seob Kim

Kyong Ho Yoon

Min Soo Kim

Irina Nam

Hui Chan Yun

Do Hyeon Kim

Kyung Hee Hyung

Hwan Sung Cheon

Sang-Kyun Kim

Sang Jo Lim

Jong-Seob Kim

Nataliya Tokareva

Jee Yun Song

Provided is a method of manufacturing a bump structure, the method including a first step for preparing a wafer including a plurality of chips each including a die pad, an under bump metal (UBM) layer on the die pad, and a bump pattern on the UBM layer, a second step for attaching a backgrinding film to an upper surface of the wafer, a third step for grinding a rear surface of the wafer by a certain thickness, a fourth step for forming a flexible material layer on a second rear surface of the wafer after being ground, and then attaching dicing tape including a ring frame, to the flexible material layer, a fifth step for removing the backgrinding film and then performing a curing process to harden the flexible material layer, and a sixth step for performing a dicing process to cut the plurality of chips into individual chips.

Bump structure manufacturing method

A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3: 

Hardmask composition having antireflective properties and method of patterning material on substrate using the same

An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.

Aromatic ring-containing polymer, polymer mixture, antireflective hardmask composition, and associated methods

An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.

Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer

A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: 

Polymer composition, hardmask composition having antireflective properties, and associated methods

A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formula 1, 2 and 3: 

Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same

Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1  Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Hardmask compositions for resist underlayer films

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided.

Antireflective hardmask composition and methods for using same

A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, Ris a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, Ris methylene or includes an aryl linking group, Ris a conjugated diene group, and Ris an unsaturated dienophile group.

Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer

An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C: In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and Ris methylene or includes a non-fluorene-containing aryl linking group.

Polymer having antireflective properties, hardmask composition including the same, process for forming a patterned material layer, and associated device

Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I)Si(OR)(OR)(OR)R

Organosilane hardmask compositions and methods of producing semiconductor devices using the same

Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include  Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: wherein Rand Rmay each independently be hydrogen, hydroxyl, Calkyl, Caryl, allyl, or halo; Rand Rmay be each independently be hydrogen, a crosslinking functionality, or a chromophore; Rand Rmay each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of Rand Ris an alkoxysilane; wherein R, R, and Rmay each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; Rmay be hydrogen, Calkyl, Caryl, or allyl; and n is a positive integer;

Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: wherein

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Gunpo-si, South Korea

Jin Kuk Lee