Tokyo Electron Limited

Jin Kudo

Taku Gohira

Maju Tomura

Masanobu Honda

Takayuki Katsunuma

Hironobu Ichikawa

Wataru Takayama

Yoshinobu Ohya

A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.

Plasma processing method including cleaning of inside of chamber main body of plasma processing apparatus

An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to &#x2212;35&#xb0; C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

Etching process method

An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power supply in an cryogenic temperature environment where a substrate temperature is controlled to be less than or equal to &#x2212;35&#xb0; C.; generating a plasma by adding a hydrocarbon gas containing at least 3 carbon atoms to an etching gas containing carbon, hydrogen, and fluorine; and etching a silicon oxide film or a laminated film made up of laminated layers of silicon-containing films having different compositions using the generated plasma.

A deposit on a target object can be removed or the amount thereof can be reduced after plasma etching is completed and before the target object is carried out of a chamber. A method of processing the target object is provided. The method includes etching including a main etching of etching an etching target film of the target object placed on a stage at a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; raising, immediately after the etching is performed or immediately after the main etching is performed, a temperature of an electrostatic chuck; and carrying-out the target object from the chamber in a state that the temperature of the electrostatic chuck is set to a high temperature.

Method of processing target object

A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.

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Miyagi, Japan

Jin Kudo