Samsung Sdi Co., Inc.

Cheil Industries Inc.

Cheil Industry, Inc.

Jin-Hee Bae

Taek-Soo Kwak

Hui-Chan Yun

Sang-Kyun Kim

Kunbae Noh

Han-Song Lee

Eun-Su Park

Sang-Hak Lim

Byeong-Gyu Hwang

Taeksoo Kwak

Bo-Sun Kim

Kwen-Woo Han

Yoong-Hee Na

Wan-Hee Lim

Bong-Hwan Kim

Huichan Yun

Jin-Woo Seo

Hyun-Ji Song

Jun-Young Jang

Go-Un Kim

Sae-Mi Park

Junyoung Jang

Jun Sakong

Youn-Jin Cho

Woo-Han Kim

Jiho Lee

Seung-Hee Hong

Jin-Wook Lee

Jingyo Kim

Dong-il Han

Jung-Kang Oh

Byeonggyu Hwang

Mi-young Kim

Eun-Seon Lee

Seungwoo Jang

Sooyeon Sim

Wanhee Lim

Byeong Gyu Hwang

Yonggoog Kim

Il Yong Jung

Sang-Ran Koh

Jong-Seob Kim

Kun-Bae Noh

Yoong Hee Na

Haneul Kim

Sun-Hae Kang

Woo Han Kim

Chungheon Lee

Euihyun Kim

Jong-Dae Jeon

Eunseon Lee

Hyeonsu Jo

Yoonyoung Koo

Jin-Gyo Kim

Myungho Kang

Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40° C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H), silane gas (SiH), and ammonia gas (NH), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))≥1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

Composition for forming silica layer and silica layer

Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Composition for forming silica layer, manufacturing method for silica layer, and silica layer

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in anH-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl, when a peak derived from NSiHand NSiHis referred to as Peak 1 and a peak derived from NSiHis referred to as Peak 2, a ratio (P/(P+P)) of an area (P) of Peak 1 relative to a total area (P+P) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P/P) of an area (P) of Region A relative to an area (P) of Region B is greater than or equal to about 1.5.

Composition for forming silica layer, silica layer and electronic device incorporating silica layer

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiOconversion rate of greater than about 0 and less than or equal to about 15. The SiOconversion rate is represented by: SiOconversion rate=(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%)&#x2212;(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%).

Composition for forming silica layer, silica layer, and electronic device

A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25&#xb0; C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Composition for forming a silica based layer, silica based layer, and electronic device

A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.

Method of forming patterns, patterns formed according to the method, and semiconductor device including the patterns

A composition for forming a silica layer includes a silicon-containing polymer and a mixed solvent including at least two solvents, wherein the mixed solvent has a surface tension of about 5 mN/m to about 35 mN/m at a temperature of about 25&#xb0; C.

Composition for forming silica layer, method for manufacturing silica layer and silica layer

A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer

A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50.&#x3b7;=&#x2003;&#x2003;[Equation 1] In Equation 1,

Composition for forming silica layer, method for manufacturing silica layer, and electric device including silica layer

A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, wherein the silicon-containing polymer has a total sum of Si&#x2014;H integral values in aH-NMR spectrum of less than or equal to about 12. The sum of the Si&#x2014;H integral values is calculated under conditions described in the specification.

Composition for forming silica layer, method for manufacturing silica layer, and silica layer

A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 &#x3bc;m to about 1 &#x3bc;m is less than or equal to about 10/ml.

Composition for forming silica based layer, and method for manufacturing silica based layer

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A method of manufacturing a silica layer includes: coating a pre-wetting liquid material including a carbon compound on a substrate; coating a composition for forming a silica layer on the substrate coated with the pre-wetting liquid material; and curing a substrate coated with the composition for forming a silica layer.

Method for manufacturing silica layer, silica layer, and electronic device

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Suwon-si, South Korea

Jin-Hee Bae