Cmc Materials, Inc.

Jin-Hao Jhang

Cheng-Yuan Ko

Hsin-Yen Wu

A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

CMP composition including anionic and cationic inhibitors

A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 &#x212b; and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 &#x212b;; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pKin a range from about 6 to about 9.

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Taichung, Taiwan

Jin-Hao Jhang