Korea Kumho Petrochemical Co., Ltd.

Jin Bong Shin

Dong Chul Seo

Seung Jae Lee

Jung Hoon Oh

Dae Hyeon Shin

Joon Hee Han

Jin Ho Kim

Hyun Soon Lim

Tae Gon Kim

Provided are an additive for resist represented by the following formula (1), and a resist composition containing the additive. The additive according to the present invention can suppress leaching caused by water during an immersion lithographic process by increasing hydrophobicity of the surface of the resist film in the exposure at the time of applying the additive to a resist composition, and can form a fine resist pattern having excellent sensitivity and resolution at the time of applying the additive to a resist composition. wherein the substituents respectively have the same meanings as defined above.

Additive for resist and resist composition comprising same

A resist resin composition includes 100 parts by weight of a copolymer represented by Formula 3 below; 0.5 to 1.5 parts by weight of a photoacid generator and 700 to 1,500 parts by weight of a solvent:  wherein R, R, and Rare each independently a Calkyl group, a Ccycloalkyl group, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group, or an aldehyde group, R, R, and Rare each independently hydrogen or a methyl group, and l, m, n, and o each independently refer to the number of repeating units in a main backbone and satisfy the conditions: l+m+n+o=1, 0&#x2266;l/(l+m+n+o)&#x3c;0.4, 0&#x3c;m/(l+m+n+o)&#x3c;0.6, 0&#x2266;n/(l+m+n+o)&#x3c;0.6, and 0&#x3c;o/(l+m+n+o)&#x3c;0.4.

Copolymer for resist comprising novel acryl based monomer and resin composition for resist comprising the same

A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y, Y, X, R, R, n, nand Ahave the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.

Photoacid generator, method for producing the same, and resist composition comprising the same

Growing community of inventors

Asan-si, South Korea

Jin Bong Shin