Samsung Electronics Co., Ltd.

Elohim Incorporation

Jihoon Cha

Kuntack Lee

Yongsun Ko

Jihoon Jeong

Hayoung Jeon

Mihyun Park

Kwangwook Lee

Taedong Kim

Seunggu Lim

Yeonglyeol Park

Yongjhin Cho

Dong-Ki Lee

An embodiment of the present disclosure provides a MIM capacitor by High-k dielectric and method for fabricating the same to prevent formation of oxygen-based interface films between a lower electrode and a dielectric layer, and between an upper electrode and a dielectric layer by stacking a first film formed of metal between the dielectric layer formed of a High-k material having a high dielectric constant and the lower electrode formed of metal, and a second film formed of metal between the dielectric layer and the upper electrode.

Method for manufacturing High-K MIM capacitor to improve electrical characteristics

A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

Substrate cleaning apparatus and substrate cleaning method using the same

Growing community of inventors

Seoul, South Korea

Jihoon Cha