Taiwan Semiconductor Manufacturing Comp. Ltd.

Jiao-Hao Chen

Kuo-Feng Yu

Chien-Yuan Chen

Chih-Wei Lee

Chih-Yu Hsu

A semiconductor device and related method for forming a gate structure. In some embodiments, a semiconductor device includes a fin extending from a substrate. In some cases, the fin includes a plurality of semiconductor channel layers. In some examples, the semiconductor device further includes a gate dielectric surrounding each of the plurality of semiconductor channel layers. In some embodiments, a first thickness of the gate dielectric disposed on a top surface of a topmost semiconductor channel layer of the plurality of semiconductor channel layers is greater than a second thickness of the gate dielectric disposed on a surface of another semiconductor channel layer disposed beneath the topmost semiconductor channel layer.

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Hsinchu, Taiwan

Jiao-Hao Chen