Honeywell International Inc.

Jianxing Li

Tim Scott

Tamara White

Michael R Pinter

Qi Tan

Jane E Buehler

Vasanth N Mohan

Timothy A Scott

Vikki L Johnson

Hinrich Hargarter

Shozo Nagano

Steven Wu

Stephane Ferrasse

Vladimir M Segal

Frank C Alford

Kevin B Albaugh

Richard G Townsend

Xiaodan Wu

A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

Lead-free solder compositions

An electronics packaging arrangement, a lead frame construct for use in an electronics packaging arrangement, and a method for manufacturing an electronics packaging arrangement. A lead frame made of copper, for example, includes a metallic barrier layer of nickel, for example, to prevent oxidation of the metal of the lead frame. A relatively thin wetting promoting layer of copper, for example, is provided on the metallic barrier layer to promote uniform wetting of a solder, such as a lead-free, zinc-based solder, onto the lead frame during a die connect process by which a chip is connected to the lead frame. A copper/zinc intermetallic layer is formed during the flow and solidification of the solder. Substantially all of the copper in the copper layer is consumed during formation of the copper/zinc intermetallic layer, and the intermetallic layer is sufficiently thin to resist internal cracking failure during manufacture and subsequent use of the electronics packaging arrangement.

Lead frame construct for lead-free solder connections

A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise SE and the second material can comprise Ge and/or Ag. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix. The second material can include powders exhibiting particles sizes no greater than about 325 mesh.

Physical vapor deposition targets and methods of formation

The invention includes a method of forming an aluminum-comprising physical vapor deposition target. An aluminum-comprising mass is deformed by equal channel angular extrusion. The mass is at least 99.99% aluminum and further comprises less than or equal to about 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr. After the aluminum-comprising mass is deformed, the mass is shaped into at least a portion of a sputtering target. The invention also encompasses a physical vapor deposition target consisting essentially of aluminum and less than or equal to 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr. Additionally, the invention encompasses thin films.

Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions

The invention includes the use of a high-modulus fiber metal matrix composite material as a backing plate for physical vapor deposition targets, as a lid for microelectronics packages, as a heat spreader, and as a heat sink. In one implementation, copper-coated carbon fibers are mixed with copper powder. In another implementation, the mixture is consolidated to a carbon fiber metal matrix composite by using a vacuum hot press. The resultant backing plate has a coefficient of thermal expansion of 4.9&times;10 /C, thermal conductivity of at least 300 W/mK, density of greater than 99% of theoretical, and the composite material of the backing plate is 30% lighter than Cu while also having higher stiffness than Cu. The high-modulus fiber metal matrix composite backing plate can be used for high power W, Ta, and ceramic PVD targets.

Discontinuous high-modulus fiber metal matrix composite for thermal management applications

A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. Other useable copper alloys include an alloy of copper and one or more other elements, the one or more other elements being present in the alloy at a total concentration from less than 1.0 at % to 0.001 at % and being selected from the group consisting of Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, Zn, Cd, B, Ga, In, C, Se, Te, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ni, Pd, Pt, Au, Tl, and Pb. An electroplating anode is formed to comprise one or more of the above alloys.

Physical vapor deposition target

Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets

The invention includes a ferroelectric physical vapor deposition target having a predominate grain size of less than or equal to 1.0 micron, and a density of at least 95% of maximum theoretical density. A method of making the target includes hot pressing a prereacted ferroelectric powder predominately including individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to 100 nanometers to form a physical vapor deposition target of desired shape. In one implementation, the prereacted ferroelectric powder is hot pressed at a maximum pressing temperature which is at least 200&deg; C. lower than would be required to produce at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time.

Ferroelectric vapor deposition targets

The invention includes container-shaped physical vapor deposition targets having a first conductive material in a container-shape and a second conductive material on an entirety of an exterior surface of the first conductive material. The second conductive material has a different composition than the first conductive material.

Container-shaped physical vapor deposition targets

A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise Se and the second material can comprise Ge. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix. The second material can include powders exhibiting particle sizes no greater than about 325 mesh.

The invention includes a method of forming an assembly of a physical vapor deposition target and support. A physical vapor deposition target is provided. The physical vapor deposition target has a coefficient of thermal expansion of less than 10&times;10 K . The physical vapor deposition target is joined to a support. The support comprises a thermal coefficient of expansion of less than 11&times;10 K . The invention also includes an assembly comprising a physical vapor deposition target and a support joined to the physical vapor deposition target. The support comprises carbon fibers and copper.

Carbon fiber and copper support for physical vapor deposition target assembly and method of forming

Discontinuous high-modulus fiber metal matrix composite for physical vapor deposition target backing plates and other thermal management applications

The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron. In one implementation, the prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape at a maximum pressing temperature which is at least 200&deg; C. lower than would be required to produce a target of a first density of at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time, and a target density greater than the first density at the lower pressing temperature is achieved.

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Spokane, WA, United States of America

Jianxing Li