Kla Tencor Corporation

Jianli Cui

Lu Yu

Nanchang Zhu

Xianghua Liu

Jianou Shi

Fan Zhang

Walter H Johnson, Iii

Walter F Johnson

Zhuoxian Zhang

Haiyang You

Juli Cheng

Huanglin Li

Zhu-bin Shi

Liming Liu

Houssam Chouaib

Derrick A Shaughnessy

Yaolei Zheng

Jin An

Resistivity probes can be used to test integrated circuits. In one example, a resistivity probe has a substrate with multiple vias and multiple metal pins. Each of the metal pins is disposed in one of the vias. The metal pins extend out of the substrate. Interconnects provide an electrical connection to the metal pins. In another example, a resistivity probe has a substrate with a top surface and multiple elements extending from the substrate. Each of the elements curves from the substrate to a tip of the element such that each of the elements is non-parallel to the top surface of the substrate.

Resistivity probes with curved portions

Metal film thickness can be determined using the sheet resistance, resistivity, and temperature coefficient of resistivity for the metal film. Variation in film thickness measurements caused by resistivity can be reduced or eliminated. A probe head may be used for some of the measurements of the metal film. The probe head can include a temperature sensor used during sheet resistance measurements. A wafer on a chuck is heated, such as using the chuck or the probe head, for the measurements.

Dynamic determination of metal film thickness from sheet resistance and TCR value

Resistivity probe having movable needle bodies

The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.

System and method for nondestructively measuring concentration and thickness of doped semiconductor layers

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Shanghai, China

Jianli Cui