Anji Microelectronics (Shanghai) Co., Ltd.

Anji Microelectronics Technology (Shanghai) Co., Ltd.

Jianfen Jing

Wenting Zhou

Jian Ma

Ying Yao

Xinyuan Cai

Heng Li

Kai Song

Pengcheng Bian

Junya Yang

Guohao Wang

A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.

Chemical mechanical polishing slurry and use thereof

The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.

Chemical mechanical polishing solution

A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significantly reduce the defects on Oxide surface which has an excellent market application prospect.

Chemical-mechanical polishing solution having high silicon nitride selectivity

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Shanghai, China

Jianfen Jing