Tokyo Electron Limited

Jian Zhang

Tatsuhiro Ueki

Yoshifumi Amano

Hideaki Sato

Hisashi Kawano

Takao Inada

Hiroshi Yoshida

Yuki Ito

Eiichiro Okamoto

Toshiyuki Shiokawa

Teruaki Konishi

Seigo Fujitsu

Koji Ogura

A substrate processing apparatusis configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatusincludes a rotating/holding unitconfigured to rotate and hold the wafer W; a processing liquid discharging unitconfigured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unita variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controllerconfigured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unitonto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

Substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate

A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

Substrate processing apparatus, substrate processing method and recording medium

A substrate processing apparatusis configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatusincludes a rotating/holding unitconfigured to rotate and hold the wafer W; a processing liquid discharging unitconfigured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controllerconfigured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unitonto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

Substrate processing apparatus and substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate

A substrate liquid processing apparatus including: a substrate rotary-holding unit configured to rotate a substrate while holding the substrate; and a processing liquid supply unit configured to supply a processing liquid to a bottom surface of the substrate held by the substrate rotary-holding unit. The substrate rotary-holding unit includes: a base plate disposed spaced apart from the substrate below the substrate; a cover member supported by the base plate and disposed outside an outer periphery of the substrate; and a discharge port formed between the base plate and the cover member and configured to discharge an air stream occurring below the substrate. The support portion of the base plate and the cover member protrudes outwards from a top surface of the base plate to be connected to the cover member.

Substrate liquid processing apparatus, substrate liquid processing method and substrate processing apparatus

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Kumamoto, Japan

Jian Zhang