Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Pericom Technology Co. Ltd. (shanghai)

Jian Pan

Yihua Shen

Yunchu Yu

Fenghua Fu

Xi Lin

Yi Hua Shen

Shaofeng Yu

Zhen Qin Luo

Shun Fang Wu

Paul Shu Huen Chan

A field-effect-transistor includes forming a fin structure on a substrate, a gate structure formed across each fin structure and covering a portion of top and sidewall surfaces of the fin structure, a first doped layer, made of a first semiconductor material and doped with first doping ions, in each fin structure on one side of the corresponding gate structure, and a second doped layer, made of a second semiconductor material, doped with second doping ions, and having doping properties different from the first doped layer, in each fin structure on another side of the corresponding gate structure.

Field-effect-transistors

A method for fabricating a semiconductor device includes forming a first mask layer, a second mask layer, and a plurality of first patterned layers on an interlayer dielectric layer and a plurality of gate structures. A plurality of first openings separate the first patterned layers with each across a source region, a drain region, and a portion of an isolation area between the source and the drain regions. The second mask layer is then patterned by etching. The method includes forming a plurality of discrete second patterned layers above the isolation areas between source and drain regions and then forming a patterned first mask layer by etching. Further, the method includes forming a plurality of contact vias to expose the source/drain regions through etching using the patterned first mask layer and second mask layer as an etch mask, and then forming a metal silicide layer on each source/drain region.

Semiconductor device and fabrication method thereof

A method for manufacturing a semiconductor device having a local interconnect structure includes providing a semiconductor substrate having a gate on an active region, a hardmask layer on the gate, and a first dielectric layer on the gate, etching the first dielectric layer to form a first interconnect trench on the active region, forming a metal silicide layer at a bottom of the first interconnect trench, forming a first metal layer filling the first interconnect trench, forming a second dielectric layer on the gate and the first interconnect trench, etching the second dielectric layer to form a second interconnect trench in a staggered pattern relative to the first interconnect trench, etching the second dielectric layer to form a third interconnect trench, forming a second metal layer in the second interconnect trench and in the third interconnect trench to form the local interconnect structure.

Semiconductor device with local interconnect structure and manufacturing method thereof

A method for fabrication a field-effect-transistor includes forming a plurality of fin structures on a substrate, forming a gate structure across each fin structure and covering a portion of top and sidewall surfaces of the fin structure, forming a first doped layer, made of a first semiconductor material and doped with first doping ions, in each fin structure on one side of the corresponding gate structure, and forming a second doped layer, made of a second semiconductor material, doped with second doping ions, and having doping properties different from the first doped layer, in each fin structure on another side of the corresponding gate structure.

Field-effect-transistors and fabrication methods thereof

A method for DRC verification of a design layout file comprising off-grid patterns includes identifying an off-grid pattern having one or more off-grid sides, outwardly expanding the one or more off-grid sides to adjacent grids to obtain a first on-grid pattern, inwardly contracting the expanded one or more sides of the first on-grid pattern to adjacent grids to obtain a second on-grid pattern, and performing a DRC verification on the second on-grid pattern using an existing on-grid DRC deck. The method also includes making a backup copy of the design layout file prior to converting the identified off-grid pattern into an on-grid pattern.

Method of design rule check for off-grid irregular layout with on-grid design rule check deck

A symmetric dual-voltage charge pump and its control circuit generate bipolar output voltages. The charge pump converts a unipolar power source to a set of dual-voltage outputs of opposite polarity that are completely independent of each other. The charge pump includes two voltage-boosting transfer capacitors and two output capacitors. Two-phase operation generates an increased-magnitude output voltage of a negative polarity and another two phases of operation generate an increased output voltage of a positive polarity. The charge pump selectively charges one or both of the bipolar outputs with individual 2-phase charge cycles or with a sequence of charge cycles. When controlled by comparators with unequal reference voltages, the charge pump can force the bipolar outputs to unequal positive and negative voltages. Charge pumping is faster since only 2 phases are needed for charging either the positive or negative output.

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Shanghai, China

Jian Pan