Applied Materials, Inc.

Lam Research Corporation

Opti Work, Inc.

Juniper Networks, Inc.

Optiworks, Inc.

Jian J Chen

Mohamad A Ayoub

Juan Carlos Rocha-Alvarez

Jianhua Zhou

Amit Kumar Bansal

Ramprakash Sankarakrishnan

Ganesh Balasubramanian

Bok Hoen Kim

Todd J Egan

Thomas E Nowak

Xinhai Han

Edward W Budiarto

Nagarajan Rajagopalan

Thomas E Wicker

Terrance Y Lee

Zhijun Jiang

Michael Wenyoung Tsiang

Jeongmin Lee

Patrick Reilly

Masaki Ogata

Heung Lak Park

Shahid Shaikh

Sergey Starik

Dmitriy Panasyuk

Robert G Veltrop

Zheng John Ye

Jianhua Wang

Jeonghoon Oh

Eric H Lenz

Mukund Srinivasan

Jianhua Gu

Zuyun Fang

Soundarrajan Jembulingam

Anthony Shun Leung Ng

Kuen-Der Christopher Lin

Xiaochen Tang

Chong Ma

Yi Yang

James S Papanu

Michael Santiago Cox

Kwangduk Douglas Lee

Lizhong Sun

Prashant Kumar Kulshreshtha

Lin Zhang

William S Kennedy

Rongping Wang

Ian Scot Latchford

Xing Lin

Joel M Cook

Steve S Mak

Charles S Rhoades

Andrew V Le

Swayambhu Prasad Behera

Peter Chang-Lin Hsieh

Xiaodong Yang

Yuan Xue

Brian Shieh

Wesley George Lau

Shilpa Sudhakaran

Victoria Yu-Wang

Karen A Williams

Carmel Ish-Shalom

Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.

Methods and apparatus for controlling radio frequency electrode impedances in process chambers

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD process

Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 into about 1410 in.

Methods and apparatus for processing a substrate using improved shield configurations

Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.

Methods and apparatus for zone control of RF bias for stress uniformity

Embodiments of the present disclosure provide an improved electrostatic chuck for supporting a substrate. The electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, a plurality of tabs projecting from the substrate supporting surface of the chuck body, wherein the tabs are disposed around the circumference of the chuck body, an electrode embedded within the chuck body, the electrode extending radially from a center of the chuck body to a region beyond the plurality of tabs, and an RF power source coupled to the electrode through a first electrical connection.

Ceramic heater and esc with enhanced wafer edge performance

An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

Bottom and side plasma tuning having closed loop control

Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

Arcing detection apparatus for plasma processing

Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

High impedance RF filter for heater with impedance tuning device

Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.

Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber

Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials

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Fremont, CA, United States of America

Jian J Chen