Hewlett-packard Development Company, L.p.

Jian-Gang Weng

Peter Mardilovich

John Christopher Rudin

Ravi Prasad

Cary G Addington

Adrian Derek Geisow

Daniel Robert Blakley

Olan C Way

Peter S Nyholm

William James Allen

Kurt M Ulmer

Gregory J May

Jeffrey Allen Nielsen

Tony S Cruz-Uribe

David Michael Kwasny

Chinmay Suresh Betrabet

John A Devos

John Arthur deVos

David Orr

Howard L Honig

Man Ho Cheung

Ron R Bendsneyder

A plurality of electrodes are electrically coupled to each other by conductive interconnects formed from selectively sintered nanoparticles.

Method to form an interconnect

A crossover is formed by imprinting a channel, by depositing a first conductor in the channel, by anodizing a surface of the first conductor and by electroforming a second conductor across the first conductor.

Crossover

Methods and apparatuses for forming components or circuits by ejecting a fluid including materials in a single ligament are disclosed.

Apparatus for forming a circuit

A color image is displayed on a screen and a luminance image is projected onto the screen. The luminance image has a greater resolution than the color image.

Projecting a luminance image

A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a first side, a first overhang along the first side, a second opposite side and a second overhang along the second side. The method also includes depositing a first metal in the recess spaced from the first side and the second side and oxidizing the first metal to create a non-linear dielectric.

Metal-insulator-metal device

Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.

Process for creating metal-insulator-metal devices

A method of conveying information from an electronic identification label to an interrogator includes coupling energy from an external field into a resonant circuit of the electronic identification label. The method also includes the electronic identification label periodically storing and discharging an amount of the coupled energy wherein the period that the electronic identification label stores and discharges the energy conveys information about the electronic identification label to the interrogator.

Electronic identification label and interrogator for use therewith

A method of controlling a display system includes projecting an image onto a surface, projecting a control beam onto the surface, tracing an interpretable pattern with the control beam, detecting the interpretable pattern, and correlating the interpretable pattern with a predefined command.

Display system with interpretable pattern detection

Process for creating Metal-Insulator-Metal devices

An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.

Solution-processed thin film transistor formation method

An exemplary solution-processed thin film transistor formation method of the invention forms solution-processed thin film layers into a transistor structure. During formation, semiconductor portions of the transistor structure are selectively heated via a laser to modify the material state of semiconductor material from a solution deposited material state to a thin film layer material state.

Growing community of inventors

Corvallis, OR, United States of America

Jian-Gang Weng