Lam Research Corporation

Avanex Corporation

Jialing Yang

Thorsten B Lill

Meihua Shen

John Hoang

Baosuo Zhou

Bart Jan Van Schravendijk

Eric A Hudson

Giovanni Barbarossa

Jon Henri

Samantha SiamHwa Tan

Hui-Jung Wu

Shih-Ked Lee

Simon Xiaofan Cao

Nagraj Shankar

Mark Naoshi Kawaguchi

Guohua Xiao

Kapu Sirish Reddy

Ananda K Banerji

Gowri Kamarthy

Christopher Lin

Kevin M McLaughlin

Charles Mao

Nathan Musselwhite

Lintao Zhang

Jay E Uglow

Karthik Subramanian Colinjivadi

Hao Chi

Francis Sloan Roberts

Gereng Gunawan

Jin Xie

Gang Li

Aaron Lynn Routzahn

Huifeng Zheng

Todd Shroeder

Nicholas Dominic Altieri

Xiofan Cao

Jiyong Ma

Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Carbon based depositions used for critical dimension control during high aspect ratio feature etches and for forming protective layers

Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Film stack simplification for high aspect ratio patterning and vertical scaling

Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H, CH, CF, NF, and Cl. Boron-containing halide gases include BCl, BBr, BF, and BI. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Cobalt etch back

An optical node and method for operation in an ultra long haul backbone network that provides DWDM optical transmission and wavelength networking functionalities are disclosed. The optical node is designed with capabilities for amplification, dispersion compensation, and add/drop functionalities. In one embodiment, three erbium-doped fiber amplifier (EDFA) are cascaded using low nonlinearity and low loss dispersion compensating module (DCM).

Optical node including three-stage optical amplifier with automatic gain and level control

The present invention provides a dispersion compensator which utilizes a Virtually Imaged Phased Array (VIPA), gratings, and birefringent wedges to moderate chromatic dispersion, dispersion slope and polarization mode dispersion, and a method and system for testing such a dispersion compensator. The dispersion compensator in accordance with the present invention propagates the composite optical signal in a forward direction; separates the wavelengths in the band of wavelengths in each of the plurality of channels, where each of the wavelengths in the band is spatially distinguishable from the other wavelengths in the band; spatially separates each band of wavelengths in the plurality of channels; spatially separates each wavelength of each separated band of wavelengths into a plurality of polarized rays; and reflects the plurality of polarized rays toward a return direction, where dispersion is added to the reflected plurality of polarized rays such that the unwanted chromatic dispersion, dispersion slope, and PMD are compensated. The dispersion compensator provides simultaneous tunable compensation of these various dispersions utilizing a single apparatus. A system which utilizes the compensator is thus cost effective to manufacture. Systems may be provides which determines the operating and performance parameters for the compensator, and measures the spectrum outputted by the compensator.

Method and system for testing a tunable chromatic dispersion, dispersion slope, and polarization mode dispersion compensator utilizing a virtually imaged phased array

The present invention provides an improved tunable chromatic dispersion compensator. The compensator includes: a virtually imaged phased array (VIPA); at least one reflector optically coupled to the VIPA; a mirror optically coupled to the at least one reflector; and a movable reflector holder coupled to the at least one reflector, where the movable reflector holder moves the at least one reflector such that a length of a beam path between the VIPA and the at least one reflector and the mirror is variable. The present invention uses the VIPA to produce a controlled variable degree of chromatic dispersion within a plurality of optical channels so as to compensate for unwanted chromatic dispersion in an optical communications system. Positional adjustment of the movable reflector holder permits variable control of the beam path length between the VIPA and the focusing lens. This variable change in beam path length permits variable control of the magnitude and sign of chromatic dispersion provide by the compensator.

Tunable chromatic dispersion compensator utilizing a virtually imaged phased array and folded light paths

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Fremont, CA, United States of America

Jialing Yang