Taiwan Semiconductor Manufacturing Comp. Ltd.

Jia-Ling Ko

Wen-Chih Chiou

Yi-Hsiu Chen

Ebin Liao

Hong-Ye Shih

The disclosure provides a method of forming a package structure, and the method includes: bonding a die to a wafer; performing a thinning process on the die, wherein the die has a first total thickness variation (TTV) after performing the thinning process; forming a dielectric layer on the wafer to cover sidewalls and a top surface the die; performing a first removal process to remove a first portion of the dielectric layer and expose the top surface of the die; and performing a second removal process to remove a second portion of the dielectric layer and a portion of the die, wherein after performing the second removal process, the die has a second TTV less than the first TTV.

Package structure and method of forming the same

Provided is a 3DIC structure includes a wafer, a die and a dielectric layer. The die is over and bonded to the wafer. The dielectric layer is over the wafer and aside the die, covering sidewalls of the die. A total thickness variation (TTV) of the die is less than 0.8 &#x3bc;m.

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Hsinchu, Taiwan

Jia-Ling Ko