United Microelectronics Corp.

Jia-Jia Chen

Chi-Mao Hsu

Tsun-Min Cheng

Huei-Ru Tsai

Ching-Wei Hsu

Chin-Fu Lin

Hsin-Yu Chen

Chun-Ling Lin

Chien-Li Kuo

Tsai-Yu Wen

Ching-Li Yang

Szu-Hao Lai

A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided.

Through silicon via (TSV) process

Through silicon via (TSV) structure and process thereof

A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.

Through silicon via process

Growing community of inventors

Taichung, Taiwan

Jia-Jia Chen