Hynix Semiconductor Inc.

Skhynix Inc.

Kabushiki Kaisha Toshiba

Hynic Semiconductor Inc.

Ji-Wang Lee

Yong-Ju Kim

Hae-Rang Choi

Ic-Su Oh

Hyung-Soo Kim

Tae-Jin Hwang

Hee-Woong Song

Jae-Min Jang

Chang-Kun Park

Sung-Woo Han

Kun-Woo Park

Shin-Deok Kang

Masahiro Takahashi

Tsuneo Inaba

Dong-Keun Kim

An electronic device comprising a semiconductor memory unit that includes a resistance variable element configured to be changed in a resistance value according to a value of data stored therein; a first reference resistance element having a first resistance value; a second reference resistance element having a second resistance value larger than the first resistance value; and a comparison unit configured to receive a voltage corresponding to the resistance value of the resistance variable element through a first input terminal and a second input terminal thereof, a voltage corresponding to the first resistance value of the first reference resistance element through a third input terminal, and a voltage corresponding to the second resistance value of the second reference resistance element through a fourth input terminal, the comparison unit configured to output a result of comparing inputs to the first input terminal and the second input terminal and inputs to the third input terminal and fourth input terminal.

Electronic devices having semiconductor magnetic memory units

A reference column of a semiconductor memory includes a reference bit line; a reference source line; and first to Nresistive memory cells disposed between the reference bit line and the reference source line. Data of a first state is stored in the first resistive memory cell and data of a second state is stored in the Nresistive memory cell before a read operation, and the first and Nresistive memory cells form current paths between the reference bit line and the reference source line in the read operation.

Reference column of semiconductor memory, and electronic device including the same

A semiconductor memory unit includes first to Nvariable resistance elements each having different resistance values according to values stored therein, wherein N is a natural number equal to or greater than 2; a reference resistance element having a first reference resistance value; and first to Ncomparison units which correspond to the first to Nvariable resistance elements, respectively, and each of which determines whether a resistance value of the corresponding variable resistance element is greater or less than a second reference resistance value, wherein the first to Ncomparison units are commonly coupled to the reference resistance element.

Electronic device

An impedance control circuit includes a first impedance unit configured to terminate an impedance node using an impedance value that is determined by an impedance control code, a second impedance unit configured to terminate the impedance node using an impedance value that is determined by an impedance control voltage, a comparison circuit configured to compare a voltage level of the impedance node and a voltage level of a reference voltage, generate an up/down signal indicating whether the voltage at the impedance node is greater than the reference voltage, and generate the impedance control voltage that has a voltage level corresponding to a difference between the voltage at the impedance node and the reference voltage, and a counter unit configured to increase or decrease a value of the impedance control code in response to the up/down signal.

Impedance control circuit and semiconductor device including the same

The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.

Input buffer circuit of semiconductor apparatus

An interface apparatus for a semiconductor integrated circuit and an interfacing method thereof controls the VOX of differential signals to a target level in response to the differential signals being outputted by an output block. The interface apparatus for a semiconductor integrated circuit includes an output block configured to output differential signals output by an internal circuit a detector configured to detect a timing error of the differential signals; and a controller configured to control a timing of the differential signals output by the internal circuit according to a detection result of the detector.

Interface apparatus for semiconductor integrated circuit and interfacing method thereof

A filter circuit includes a filtering unit configured to filter an input signal and generate an output signal, and a weight generation unit configured to monitor a variation of the output signal and generate weight information based on the monitored variation.

Filter circuit, integrated circuit including the same, and signal filtering method

A semiconductor IC device capable of power-sharing includes a first power line configured to be supplied with a first power, a second power line configured to be supplied with a second power, a switching block configured to connect the first power line with the second power line in response to a first control signal, and a power-sharing control block configured to generate the control signal in accordance with a plurality of operation command signals.

Semiconductor IC device having power-sharing and method of power-sharing thereof

A variable delay circuit includes at least a fixed delay unit, a first selection unit, and variable delay unit. The fixed delay unit receives an input signal and a first delay selection signal indicative of a first delay, and outputs a first delayed signal that is substantially the input signal delayed by the first delay. The first selection unit receives the input signal, the first delayed signal, and a second delay selection signal, and outputs either the input signal or the first delayed signal based on the second delay selection signal to the variable delay unit. The variable delay unit also receives a third delay selection signal indicative of a third delay, and outputs a output signal that is substantially the output signal of the selection unit delayed by a third delay. The first delay is 0 or X multiples of M delay units. The third delay is a delay selected from 0 to N delay units.

Low power variable delay circuit

An integrated circuit includes a counter configured to perform a counting operation and output a count code value. The integrated circuit further includes an operation controller, a digital circuit and an alignment unit. The operation controller receives the count code value and generates a first control signal and a second control signal. The first control signal is generated, when the count code value is equal to a first value, which is counted by the counter prior to a target count value. The second control signal is generated, when the count code value is equal to the target count value. A digital circuit performs a first operation based on the first control signal, and output a digital signal. An alignment unit aligns the digital signal, and outputs the aligned digital signal as a final digital signal in response to the second control signal.

Integrated circuit and method for driving the same

A semiconductor integrated circuit equipped with an equalizer which has a circuit structure simpler than that of a related equalizer according to an FFE scheme or a DFE scheme and is capable of preventing a noise component from being amplified. The data receiver includes a plurality of receiver units, wherein each receiver unit includes a plurality of level detectors which detect different levels, and an encoder, in which the level detectors receive data according to a clock signal having a predetermined phase difference and perform an amplification operation including an equalization function based on feedback data, thereby outputting an amplification signal, and wherein level detectors of one receiver unit receive an amplification signal, as the feedback data, from level detectors of another receiver unit that receives a first clock signal having a phase more advanced than a phase of a second clock signal received in one receiver unit.

Data receiver of semiconductor integrated circuit

An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator; and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.

Internal supply voltage generating circuit and method for generating internal supply voltage

A latency control circuit includes a path calculator configured to calculate a delay value of a path that an input signal is to go through inside a chip and output the delay value as path information, a delay value calculator configured to output delay information representing a delay value for delaying the input signal based on a latency value of the input signal and the path information, and a delayer configured to delay the input signal by a delay corresponding to the delay information.

Growing community of inventors

Gyeonggi-do, South Korea

Ji-Wang Lee