General Electric Company

Ji-Ung Lee

Anil Raj Duggal

Kelvin Ma

George E Possin

Ching-Yeu Wei

Douglas Albagli

Michael Andrew De Rooij

William Andrew Hennessy

William Edward Burdick, Jr

Colin Richard Wilson

Patrick Roland Lucien Malenfant

Yun Li

Walter Vladimir Cicha

The system and method provided herein for limiting the effects of arcing in field-type electron emitter arrays improves the robustness of such arrays. Field-type electron emitter arrays generally have a substrate, an insulator, and a gating electrode. By including a resistive substance in the gate of the emitter array, arcing events may be isolated to a single emitter such that the remaining emitters of an array can continue electron emission and/or the short circuit current of the arc can be limited.

System and method for limiting arc effects in field emitter arrays

An inductor includes an electrical conductor wound in a magnetic flux concentrating pattern, the electrical conductor comprises a plurality of carbon nanotubes that are substantially aligned with an axis along a center of the electrical conductor.

High performance low volume inductor and method of making same

Organic light emitting devices are disclosed that use a micro electromechanical system (MEMS) structure to enable a pixel and pixel array wherein each pixel contains a MEMS and an OLED element. A MEMS structure is used for switching the OLED element. These OLED/MEMS pixels can be fabricated on flex circuit, silicon, as well as other inorganic materials. They can be fabricated in a large array for developing a 2-dimensional display application and each pixel can be addressed through conventional matrix scanning addressing scheme. The ability of fabricating these OLED/MEMS pixels on flexible organic substrates as well as other rigid substrates enables wider selection of substrate materials for use with different applications.

Micro electromechanical system controlled organic LED and pixel arrays and method of using and of manufacturing same

The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.

High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing

Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

Storage capacitor design for a solid state imager

Micro electro mechanical system controlled organic LED and pixel arrays and method of using and of manufacturing same

Micro electromechanical system controlled organic led and pixel arrays and method of using and of manufacturing same

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Niskayuna, NY, United States of America

Ji-Ung Lee