Applied Materials, Inc.

Ji-Dih Hu

Dongming Iu

Wolfgang R Aderhold

Samuel C Howells

Lara Hawrylchak

Norman L Tam

Leonid Mark Tertitski

Michael Liu

Schubert S Chu

Ala Moradian

Brian Hayes Burrows

Vilen K Nestorov

Chaitanya Anjaneyalu Prasad

Janardhan Devrajan

An apparatus for measuring a temperature of an assembly that is internal to a process chamber. The apparatus may include a light pipe positioned between a lamp radiation filtering window and the assembly, the light pipe has a first end with a bevel configured to redirect infrared radiation emitted from the assembly through the light pipe and has a second end distal to the first end, an optical assembly configured to collimate, filter, and focus infrared radiation from the second end of the light pipe, an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation, a temperature circuit that transforms the at least one signal into a temperature value, and a controller that is configured to receive the temperature value and to make adjustments to other process parameters of process chamber based on the temperature value.

Methods and apparatus for measuring edge ring temperature

Methods, systems, and apparatus provide for optically monitoring individual lamps of substrate processing chambers. In one aspect, the individual lamps are monitored to determine if one or more lamps are in need of replacement. A method includes using one or more camera coupled to a borescope to capture a plurality of images of one or more lamps in a substrate processing chamber. The plurality of images is analyzed to identify a change of mean light pixel intensity in an image reference region associated with each lamp. The method includes generating an alert based on the detection of the mean light pixel intensity change.

Methods, systems, and apparatus for optically monitoring individual lamps

Embodiments described herein generally relate to an in-situ metrology system that can constantly provide an uninterrupted optical access to a substrate disposed within a process chamber. In one embodiment, a metrology system for a substrate processing chamber is provided. The metrology system includes a sensor view pipe coupling to a quartz dome of a substrate processing chamber, a flange extending radially from an outer surface of the sensor view pipe, and a viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window.

Purged viewport for quartz dome in epitaxy reactor

Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. In one or more embodiments, a process chamber includes chamber body, a window disposed on a first portion of the chamber body, a chamber bottom, and a shield disposed on a second portion of the chamber body. The shield has a flat surface facing the window to reduce reflected radiant energy to a back side of a substrate disposed in the process chamber during operation. The process chamber further includes an edge support for supporting the substrate and a cooling member disposed on the chamber bottom. The cooling member is disposed in proximity of the edge support to cool the edge support during low temperature operation in order to improve the temperature uniformity of the substrate.

Thermal processing chamber with low temperature control

A method and apparatus to determine a temperature of a substrate using a spectrum of radiation is disclosed herein. In one aspect, a process chamber includes a lamp assembly optically coupled to a spectrometer. The spectrometer is used to determine a temperature of a substrate within the process chamber. A controller is coupled to the spectrometer and controls the lamp assembly to selectively heat and cool the substrate. In another aspect, a method of includes exposing a substrate to a radiation source. A spectrum of radiation is detected by a spectrometer across a substrate. The spectrum of radiation passed through the substrate is determined and used to determine a temperature of the substrate.

Methods and apparatus for wafer temperature measurement

Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. In one example, a process chamber includes chamber body, a window disposed on a first portion of the chamber body, a chamber bottom, and a shield disposed on a second portion of the chamber body. The shield has a flat surface facing the window to reduce reflected radiant energy to a back side of a substrate disposed in the process chamber during operation. The process chamber further includes an edge support for supporting the substrate and a cooling member disposed on the chamber bottom. The cooling member is disposed in proximity of the edge support to cool the edge support during low temperature operation in order to improve the temperature uniformity of the substrate.

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San Jose, CA, United States of America

Ji-Dih Hu