Powertech Technology Inc.

Industrial Technology Research Institute

Instrument Technology Research Center

Ji-Cheng Lin

Li-Chih Fang

Chun-Te Lin

Che-Min Chu

Shyh-Ming Chang

Shou-Lung Chen

Ra-Min Tain

Shyi-Ching Liau

Shan-Pu Yu

Chien-Wen Huang

Yung-Yu Hsu

Rong-Chang Feng

Chia-Wei Chiang

Wen-Jeng Fan

Su-Tsai Lu

Yao-Sheng Lin

Tai-Hong Chen

Chih-Yuan Cheng

Hsien-Chie Cheng

Chih-Yuah Cheng

A manufacturing method of a stacked chip package structure includes the following steps. A first chip is disposed on a carrier, wherein the first chip has a first active surface and a plurality of first pads disposed on the first active surface. A second chip is disposed on the first chip without covering the first pads and has a second active surface and a plurality of second pads disposed on the second active surface. A plurality of first stud bumps are formed on the first pads. A plurality of pillar bumps are formed on the second pads. The first chip and the second chip are encapsulated by an encapsulant, wherein the encapsulant exposes a top surface of each second stud bump. A plurality of first vias are formed by a laser process, wherein the first vias penetrate the encapsulant and expose the first stud bumps. A conductive layer is formed in the first vias to form a plurality of first conductive vias. The carrier is removed.

Stacked chip package structure and manufacturing method thereof

A package structure including a die, a plurality of first conductive connectors, a second conductive connector electrically insulated from the die, a redistribution layer and a conductive shield is provided. The die includes an active surface, a back surface opposite the active surface, and a sidewall coupling the active surface to the back surface. The first conductive connectors are disposed on the active surface of the die and electrically connected to the die. The second conductive connector is disposed on the die and aside the first conductive connectors. The redistribution layer is disposed on the die and electrically connected to the first conductive connectors and the second conductive connector. The conductive shield coupled to the redistribution layer surrounds the second conductive connector and at least a portion of the sidewall. The die is electrically insulated to the conductive shield. A chip package structure is also provided.

Package structure and chip structure

A manufacturing method of a package structure including the following steps is provided. A plurality of first conductive connectors and a second conductive connector on an active surface of a die are formed. The first conductive connectors are electrically connected to the die. The second conductive connector is formed aside the first conductive connectors and electrically insulated to the die. A redistribution layer is formed on the die. The redistribution layer is electrically connected to the first conductive connectors and the second conductive connector. A conductive shield is formed on the redistribution layer to surround the second conductive connector and at least a portion of a sidewall of the die coupled the active surface. The die is electrically insulated from the conductive shield. Another manufacturing method of a package structure is also provided.

Manufacturing method of package structure having conductive shield

A stacked chip package structure includes a first chip, pillar bumps, a first encapsulant, a first redistribution layer, a second chip, a second encapsulant, a second redistribution layer and a through via. The pillar bumps are disposed on a plurality of first pads of the first chip respectively. The first encapsulant encapsulates the first chip and exposes the pillar bumps. The first redistribution layer is disposed on the first encapsulant and electrically connects the first chip. The second chip is disposed on the first redistribution layer. The second encapsulant encapsulates the second chip. The second redistribution layer is disposed on the second encapsulant and electrically coupled to the second chip. The through via penetrates the second encapsulant and electrically connects the first redistribution layer and the second redistribution layer.

A structure for reducing stress for vias and a fabricating method thereof are provided. One or more wires or vias in the thickness direction are enframed with the use of a stress block in a lattice structure to be isolated from being directly contacted with the major portion of insulating materials with a high coefficient of thermal expansion. Thus, the shear stress resulting from temperature loading can be blocked or absorbed by the stress block.

Structure for reducing stress for vias and fabricating method thereof

A structure for protecting electronic package contacts is provided. The structure includes at least an electronic contact mounted on a chip, a dielectric layer, a conductor trace line and a protective layer. The protective layer is used to prevent stresses from being gathered within electronic contacts on the chip through surroundingly covering the conductor trace line.

Structure for protecting electronic packaging contacts from stress

A mold array process (MAP) for manufacturing a plurality of semiconductor packages is revealed. Firstly, a substrate strip including a plurality of substrate units arranged in an array within a molding area is provided. A plurality of chips are disposed on the substrate units. An encapsulant by molding is formed on the molding area of the substrate strip to continuously encapsulate the chips. During the molding process, an adjustable top mold is implemented where a cavity width between two opposing sidewalls inside a top mold chest can be adjusted to make the mold flow speeds at the center and at the side rails of the molding area the same.

Mold array process for semiconductor packages

A package structure with embedded electronic devices is provided. The package structure includes a substrate, a multi-layered circuit board, an adhesive film and at least an electronic device. The electronic device is disposed on the substrate. The electronic device is press-adhered to the multi-layered circuit board through the adhesive film and the composite bump thereon, so that the electronic device is embedded within the package structure and between the substrate and the circuit board. Due to the deformity of the composite bump, the electronic device is protected from being cracking in the pressing process.

Package structure for electronic device

A composite bump suitable for disposing on a substrate pad is provided. The composite bump includes a compliant body and an outer conductive layer. The coefficient of thermal expansion (CTE) of the compliant body is between 5 ppm/&#xb0; C. and 200 ppm/&#xb0; C. The outer conductive layer covers the compliant body and is electrically connected to the pad. The compliant body can provide a stress buffering effect for a bonding operation. Furthermore, by setting of the CTE of the compliant body within a preferable range, damages caused by thermal stress are reduced while the bonding effect is enhanced.

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Hsinchu, Taiwan

Ji-Cheng Lin