Applied Materials, Inc.

University of California

Jessica Sevanne Kachian

Jeffrey W Anthis

Andrew C Kummel

Mary Edmonds

Mei Yin Chang

David P Thompson

Nitin K Ingle

Soonam Park

Xikun Wang

Naomi Yoshida

Lin Xu

Schubert S Chu

Abhishek Dube

Sang Wook Park

Hyunwoong Kim

Mark Joseph Saly

Jingmei Liang

Nagarajan Rajagopalan

Tobin Kaufman-Osborn

Lin Dong

Kiran V Thadani

Steve Wolf

Embodiments described herein provide a self-limiting and saturating Si&#x2014;Obilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO, but instead produce a saturated Si&#x2014;Ofilm with &#x2014;OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD

Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300&#xb0; C. and 500&#xb0; C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300&#xb0; C. and 500&#xb0; C. A layered composition includes a first layer selected from the group consisting of InGaAs, InGaSb, InGaN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si&#x2014;H and Si&#x2014;OH.

CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.

Selective deposition through formation of self-assembled monolayers

Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation of an atomic layer deposition (ALD) control layer as a diffusion barrier or gate dielectric layer and subsequent ALD processing. Embodiments described herein are believed to be advantageously utilized concerning gate oxide deposition, diffusion barrier deposition, surface functionalization, surface passivation, and oxide nucleation, among other processes. More specifically, embodiments described herein provide for silicon nitride ALD processes which functionalize, passivate, and nucleate a SiNmonolayer at temperatures below about 300&#xb0; C.

Surface functionalization and passivation with a control layer

Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

Apparatus and method for selective deposition

A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150&#xb0; C. or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150&#xb0; C. or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.

FCVD line bending resolution by deposition modulation

CVD silicon monolayer formation method and gate oxide ALD formation on III-V materials

Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Selective etch for metal-containing materials

Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD

Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

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Sunnyvale, CA, United States of America

Jessica Sevanne Kachian