Michigan State University

Fraunhofer Usa, Inc.

Saint-gobain/norton Industrial Ceramics Corporation

Jes Asmussen

Donnie K Reinhard

Timothy Grotjohn

Michael Frank Becker

Thomas Schuelke

Yajun Gu

M Kagan Yaran

David King

Jing Lu

Kadek W Hemawan

Jie Zhang

Jianghua Wei

Martin C Hawley

Michael John Ulczynski

Shreya Nad

Timothy Hogan

Trent A Shidaker

Rahul Ramamurti

Ning Xi

Paul D Goldman

Baokang Bi

Brage Golding

Rabindra N Chakraborty

Roger Booth

Wen-Shin Huang

Andy Wijaya

Ronald E Fritz

Jeffrey A Hopwood

Shengxi Zuo

Joseph J Root

Thaddeus A Roppel

Mahmoud Dahimene

Timothy A Grotjohn

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

Methods and apparatus for microwave plasma assisted chemical vapor deposition reactors

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MCPR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (&#x3e;180-320 Torr) and high power densities (&#x3e;150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.

Microwave plasma reactors

The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

Process and apparatus for diamond synthesis

The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

N-doped single crystal diamond substrates and methods therefor

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

A miniature microwave plasma torch apparatus () is described. The microwave plasma torch apparatus () is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus () operates near or at atmospheric pressure for use in materials processing. The apparatus () provides a wide range of flow rates so that discharge properties vary from diffusional flow of radicals for gentle surface processing to high velocity, approaching supersonic, torch discharges for cutting and welding applications. The miniature microwave plasma torch apparatus () also has a very small materials processing spot size.

Miniature microwave plasma torch application and method of use thereof

An apparatus and process for manufacturing changes of a substrate in a work region which is 100&#xd7;100&#xd7;100 microns or smaller is described. The apparatus uses a plasma source adjacent to the work region to produce radiation or matter which changes the surface. An atomic force microscope or laser can be used in addition. The process and apparatus can be used to produce MEMS devices on a substrate for use in a wide variety of applications.

Process and apparatus for modifying a surface in a work region

Wetted thin diamond films which are drapable are described. The films are mounted on various substrates and used as windows for electromagnetic radiation or form a surface coating on an article of manufacture.

Drapable diamond thin films and method for the preparation thereof

Surface Acoustic Wave (SAW) devices with an unpolished or nominally polished nanocrystalline diamond film, metal electrodes and piezoelectric composition coatings are described. The devices are used as radio frequency and microwave filters.

Surface acoustic wave devices based on unpolished nanocrystalline diamond

Growing community of inventors

East Lansing, MI, United States of America

Jes Asmussen