Taiwan Semiconductor Manufacturing Comp. Ltd.

Jer-Shien Yang

Chien-Hung Lin

Hung-Wen Chen

Wen-Lung Ho

Chien-Chih Wu

Yen-Ji Chen

I-Ling Kuo

Huei-Ju Yu

Pei-Sheng Lin

Chunyuan Chao

Shiang-Chin Lu

A slit door assembly includes a door plate, a supporting arm including a first end coupled to the door plate and a second end away from the first end, and a linkage unit including a rod member and a pin member protruding from the rod member and connecting to the second end of the supporting arm. A fillet is disposed between the pin member and the rod member. A method of operating a slit door assembly includes receiving a door plate, receiving a supporting arm coupled to the door plate, and coupling a linkage unit to the supporting arm, wherein the linkage unit includes a pin member and a rod member, the pin member is protrudes from the rod member and having a fillet. The method further includes applying a first force to the linkage unit to move the door plate from a first position to a second position.

Slit door assembly and method of operating the same

A semiconductor structure includes a semiconductor substrate, a dielectric layer, a buffer layer, at least one recess, and at least one conductor. The dielectric layer is present on the semiconductor substrate. The buffer layer is present between the semiconductor substrate and the dielectric layer. The recess extends into the semiconductor substrate through the dielectric layer and the buffer layer, in which the buffer layer has a removing rate with respect to an etching process for forming the recess. The removing rate of the buffer layer is between those of the semiconductor substrate and the dielectric layer. The conductor is present in the recess.

Semiconductor structure and method for manufacturing the same

A semiconductor structure includes a substrate, an imaging pixel array disposed on a first region of the substrate, a first isolation disposed in the first region, a periphery circuitry disposed on a second region of the substrate, and a second isolation disposed in the second region. The imaging pixel array has a plurality of imaging pixels configured to capture image data. The periphery circuitry has a transistor configured to receive and process the image data. The first isolation has a first depth and a first protrusion projected from a surface of the substrate. The second isolation has a second depth and a second protrusion projected from the surface of the substrate. The first protrusion has a substantially same height as the second protrusion. The first depth is different from the second depth.

Semiconductor structure and manufacturing method thereof

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Hsinchu, Taiwan

Jer-Shien Yang