Applied Materials, Inc.

Jeong Hwan Kim

Deenesh Padhi

Qian Fu

Hang Yu

Xiawan Yang

Chuanxi Yang

Yeonju Kwak

Siyu Zhu

Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

Boron nitride for mask patterning

Growing community of inventors

San Jose, CA, United States of America

Jeong Hwan Kim