Infineon Technologies Ag

Jens Goerlich

Reinhold Bayerer

Ivan Nikitin

Alexander Heinrich

Manfred Schneegans

Olaf Hohlfeld

Karsten Guth

Hannes Eder

A description is given of a method. In one embodiment the method includes providing a semiconductor chip with semiconductor material being exposed at a first surface of the semiconductor chip. The semiconductor chip is placed over a carrier with the first surface facing the carrier. An electrically conductive material is arranged between the semiconductor chip and the carrier. Heat is applied to attach the semiconductor chip to the carrier.

Device including a semiconductor chip and a carrier and fabrication method

A power semiconductor module is fabricated by providing a circuit substrate with a metal surface and an insulating substrate comprising an insulation carrier featuring a bottom side provided with a bottom metallization layer. An anchoring structure is provided comprising a plurality of oblong pillars each featuring a first end facing away from the insulation carrier, at least a subset of the pillars being distributed over the anchoring structure in its entirety, it applying for each of the pillars of the subset that from a sidewall thereof no or a maximum of three elongated bonding webs each extend to a sidewall of another pillar where they are bonded thereto. The anchoring structure is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom metallization layer and anchoring structure by means of a solder packing all interstices between the metal surface and bottom metallization layer with the solder.

Method for fabricating a circuit substrate assembly and a power electronics module comprising an anchoring structure for producing a changing temperature-stable solder bond

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Bueren, Germany

Jens Goerlich