Applied Materials, Inc.

Jenn-Yue Wang

Hua Chung

Schubert S Chu

Thai Cheng Chua

Abhishek Dube

Yi-Chiau Huang

Xuebin Li

Christian Valencia

Mei Yin Chang

Philip Allan Kraus

Avgerinos V Gelatos

John Leonard Sudijono

He Ren

Yu Lei

Hong Zhang

Kai Wu

Kazuya Daito

Yi Xu

Raymond Hoiman Hung

David T Or

Vikash Banthia

Rong Tao

Xi Cen

Tuck Foong Koh

Guoqiang Jian

Chi-Chou Lin

Jing Zhou

Feiyue Ma

Vicknesh Sahmuganathan

Jia Ye

Yakuan Yao

Yiming Lai

Sze Chieh Tan

Doreen Yong

Masahiro Kawasaki

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.

Nanocrystalline diamond with amorphous interfacial layer

Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.

Low temperature selective etching of silicon nitride using microwave plasma

The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

Method for forming a metal gapfill

Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375&#xb0; C. to about 450&#xb0; C. and a chamber pressure of about 5 Torr to about 20 Torr.

Method to grow thin epitaxial films at low temperature

Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.

Bottom up plating by organic surface passivation and differential plating retardation

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Fremont, CA, United States of America

Jenn-Yue Wang