Applied Materials, Inc.

Contour Semiconductor, Inc.

Jenn C Chow

David Walter Groechel

Tuochuan Huang

Han Wang

Gang Grant Peng

Gang Peng

Mac D Apodaca

Thomas Brown

Li Wu

Ailian Zhao

Dorothea Buechel-Rimmel

Lisa Ceder

Embodiments described herein relate to chamber component cleaning systems and methods for cleaning a chamber component. The chamber component cleaning system includes a spray station, at least a first cleaning station, a dry station, a component transfer mechanism, and one or more enclosures that enclose the spray station, at least the first cleaning station, the dry station, and the component transfer mechanism. The spray station has a holder to position a chamber component in a path of a flow of a cleaning spray and a movable nozzle to provide the flow of the cleaning spray at a first pressure in a path of portions of the chamber component. The first cleaning station has a push mechanism to force a cleaning fluid through features and/or holes of the chamber component and at least one movable transducer to provide ultrasonic energy to the portions of the chamber component.

Integrated semiconductor part cleaning system

A system to provide a texture to a surface of a component for use in a semiconductor processing chamber is provided. The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in a range between about 345 nm and about 1100 nm across the surface of the component to form a plurality of features on the component.

Texturizing a surface without bead blasting

A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.

Method for forming self-aligned phase-change semiconductor diode memory

Growing community of inventors

San Jose, CA, United States of America

Jenn C Chow