Advanced Semiconductor Engineering, Inc.

Adavnaced Semiconductor Engineering Inc.

Jen-Kuang Fang

Min-Lung Huang

Chun-Chi Lee

Ho-Ming Tong

Chao-Fu Weng

Ching-Huei Su

Jau-Shoung Chen

Yung-Chi Lee

Yu-Chen Chou

Su Tao

Tsung-Hua Wu

Wen-Long Lu

Shih-Chang Lee

Yung-I Yeh

Wei-Chung Wang

Chun-Hung Lin

Min Lung Huang

Kuo-Hua Chen

Kuo-Pin Yang

Chih-Ming Chung

Kuang-Lin Lo

Shyh-Ing Wu

Shih-Kuang Chen

Hsueh-Te Wang

Ching-Fu Horng

Hung-Nan Chen

Ching Kuo Hsu

Chung-Hwa Feng

Chan Wen Liu

A semiconductor package device includes a circuit layer having a top surface, a first electronic component disposed on the top surface of the circuit layer, and a first conductive element disposed on the top surface of the circuit layer, the first conductive element having a top surface. The first electronic component has an active surface and a back surface facing the top surface of the circuit layer. A distance between the active surface of the first electronic component and the top surface of the circuit layer is greater than a distance between the top surface of the first conductive element and the top surface of the circuit layer.

Semiconductor package device and method of manufacturing the same

A substrate panel structure includes a plurality of sub-panels and a dielectric portion. Each of the sub-panels includes a plurality of substrate units. The dielectric portion is disposed between the sub-panels.

Substrate panel structure and manufacturing process

A semiconductor device package includes an electronic component, a first set of conductive wires electrically connected to the electronic component, and an insulation layer surrounding the first set of conductive wires. The insulation layer exposes a portion of the first set of the conductive wires. The insulation layer is devoid of a filler.

A semiconductor device package includes an electronic component, a first substrate, a first bonding wire and a second substrate. The electronic component has a first surface. The first substrate is disposed on the first surface of the electronic component. The first bonding wire electrically connects the first substrate to the electronic component. The second substrate is disposed on the first surface of the electronic component. The second substrate defines an opening accommodating the first substrate and the first bonding wire.

Semiconductor device package

A semiconductor package device comprises an electronic component, a conductive bump and a first conductive layer. The electronic component has a top surface. The conductive bump is disposed on the top surface of the electronic component. The conductive bump includes a main body and a protruding portion. The first conductive layer covers a portion of the protruding portion. The first conductive layer has a first upper surface and a second upper surface. The first upper surface and the second upper surface are not coplanar.

A package device includes a circuit layer, at least one conductive segment, an encapsulant and a redistribution layer. The conductive segment is disposed on the circuit layer and has a first surface and a second surface. The encapsulant encapsulates at least a portion of the conductive segment and has a first upper surface. A first portion of the first surface and at least a portion of the second surface of the conductive segment are disposed above the first upper surface of the encapsulant. The redistribution layer is disposed on the encapsulant, the first portion of the first surface of the conductive segment, and the second surface of the conductive segment.

Package device, semiconductor device, and method for manufacturing the package device

A semiconductor package device comprises a first dielectric layer, a first conductive pad and a first conductive element. The first dielectric layer has a first surface and a second surface opposite to the first surface. The first dielectric layer defines a first opening tapered from the first surface toward the second surface. The first conductive pad is within the first opening and adjacent to the second surface of the first dielectric layer. At least a portion of the first conductive element is within the first opening. The first conductive element is engaged with (e.g., abuts) a sidewall of the first opening, the first conductive element having a first surface facing toward the first conductive pad, wherein the first surface of the first conductive element is spaced apart from the first conductive pad.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

The present disclosure relates to a semiconductor package structure, including a die and a package substrate. The die includes a semiconductor substrate, multiple interconnect metal layers, and at least one inter-level dielectric disposed between ones of the interconnect metal layers. Each inter-level dielectric is formed of a low k material. An outermost interconnect metal layer has multiple first conductive segments exposed from a surface of the inter-level dielectric. The package substrate includes a substrate body and multiple second conductive segments exposed from a surface of the substrate body. The second conductive segments are electrically connected to the first conductive segments.

Semiconductor package structure including die and substrate electrically connected through conductive segments

A method of forming pre-solders on a substrate is provided. Firstly, a substrate is provided. The substrate includes an upper surface and a lower surface. There are several metal circuits and a solder mask both on the upper and the lower surfaces. Each solder mask covers parts of the corresponding metal circuits and parts of the corresponding surface for exposing parts of several pads of the corresponding metal circuits. Then, a patterned photo-resist film is formed on the upper surface. The patterned photo-resist film has several openings for exposing the upper-surface pads. Afterwards, several metal materials are formed in the opening by printing. Thereon, the metal materials are reflown to form several pre-solders on the upper-surface pads. Finally, the patterned photo-resist film is removed.

Method of packaging flip chip and method of forming pre-solders on substrate thereof

A multi-chip stack package includes a substrate, a first chip, a second chip, a plurality of bumps, a plurality of junction interface bumps, a plurality of conductive wires, a filler material and an encapsulating material. The substrate has a plurality of first contacts and a plurality of second contacts thereon. The first chip is bonded to the substrate surface by the bumps positioned between the active surface of the first chip and the first contacts. The second chip is bonded to the first chip by the junction interface bumps positioned between the back surface of the first chip and the back surface of the second chip. The conductive wires electrically connect the active surface of the second chip and the second contacts. The filler material encloses the bumps and the junction interface bumps. The encapsulating material encloses the first chip, the second chip and the conductive wires.

Multi-chip stack package and fabricating method thereof

A fabrication method for PCBs. The method includes providing a substrate having a layout area and a periphery area around the layout area on a surface, forming a patterned wiring layer, having a bus line in the periphery area, a plurality of pads in the layout area, a plurality of bridge lines providing electrical connection between the pads, and a plating line electrically connecting the bus line and pads, overlying the substrate, forming a patterned solder mask over the substrate and wiring layer, the patterned solder mask having a plurality of first openings respectively exposing the pads and plating a metal layer respectively overlying the pads, forming a plurality of second openings respectively exposing the bridge lines between the pads, and removing the exposed bridge lines.

Fabrication method for printed circuit board

The present invention provides a method of forming a plurality of bumps over a wafer. The wafer has a plurality of contact pads and a passivation layer thereon and the passivation layer exposes the contact pads. An adhesion layer is formed over the active surface of the wafer and covers both the contact pads and the passivation layer. A metallic layer is formed over the adhesion layer. The patterned adhesion layer and patterned metallic layer remain on top of the contact pads. A photoresist layer having a plurality of openings that expose the metallic layer is formed on the active surface of the wafer. A flux material is deposited into the openings and then a solder block is disposed into each of the openings. A reflow process is performed to bond the solder block with the metallic layer. Finally, the flux material and the photoresist layer are removed.

Method of forming bumps

A bumpless assembly package mainly comprises a substrate, and a chip. The substrate has an upper surface and an opposite lower surface, a plurality of first contacts and a plurality of second contacts formed on the upper surface of the substrate, wherein one of the first contacts is electrically connected to one of the second contacts. The chip has an active surface and a boding pad formed on the active surface and is disposed in the opening, Moreover, an electrically conductive layer is disposed above the upper surface of the substrate and the active surface of the chip, and extended from the upper surface of the substrate to the active surface of the chip so as to electrically connect the chip and the substrate. In addition, a protective layer is provided to dispose above the electrically conductive layer and expose the second contacts so that the second contacts can electrically connect to external electronic devices.

Bumpless assembly package

A wafer-level package structure, applicable to a flip-chip arrangement on a carrier, which comprises a plurality of contact points, is described. This wafer-level package structure is mainly formed with a chip and a conductive layer. The conductive layer is arranged on the bonding pads of the chip as contact points. The conductive layer can further be arranged at a region outside the bonding pads on the chip as a heat sink to enhance the heat dissipation ability of the package.

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Kaohsiung, Taiwan

Jen-Kuang Fang