Taiwan Semiconductor Manufacturing Comp. Ltd.

Jen-Hao Yang

Ren-Hua Guo

Ju-Ru Hsieh

A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.

Deposition apparatus and method for manufacturing semiconductor device using the same

A method for manufacturing a semiconductor device includes forming a transistor on a substrate. Precursor gases are provided from a showerhead of a chemical vapor deposition (CVD) apparatus to form a contact etch stop layer (CESL) to cover the transistor and the substrate. A temperature of the showerhead is controlled in a range of about 70&#xb0; C. to about 100&#xb0; C. to control a temperature of the precursor gases.

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Taichung, Taiwan

Jen-Hao Yang