Promos Technologies, Inc

Siemens Aktiengesellschaft

Mosel Vitelic Corporation

Jen-Chieh Tung

Jiun-Fang Wang

Champion Yi

Ching-Yen Lin

Sheng-Jan Chang

Kao-Wei Huang

Kuan-Fu Chang

Chia-Ching Hsieh

Yu-Wei Chin

A profile control system for controlling a profile of a polishing pad, adapted in a chemical mechanical polishing (CMP) apparatus comprises: a polishing pad, a polishing table, a polishing head, and a conditioner, wherein the polishing pad has a transparent region. The control system includes at least one illuminant, a detector and a processor. The illuminant is in the polishing table and corresponds to the transparent region of the polishing pad. The detector is over the polishing pad to detect the light from the illuminant passing through the transparent region of the polishing pad. The processor is adapted to determine the thickness of the polishing pad according to the light detected by the detector and transmits a processing signal to the conditioner for adjusting processing recipes of the conditioner. Therefore, it is possible to obtain a polishing pad of a desired profile and the variations of the uniformity of the wafers can be reduced.

Chemical mechanical polishing apparatus, profile control system and conditioning method thereof

A slurry supply system disposed above the rotating platen of a chemical mechanical polishing apparatus. The slurry supply system includes a wafer carrier configured to hold a semiconductor wafer to be polished; a supporting arm to support the wafer carrier; a slurry supplier connected to the supporting arm and located on the front edge of the rotating direction of the rotating platen so that the slurry supplier is positioned opposite the wafer carrier; and a plurality of openings formed on the slurry supplier to feed chemical mechanical polishing fluids, each of the openings individually supplied with individual control of the chemical mechanical polishing fluids.

Slurry supply system disposed above the rotating platen of a chemical mechanical polishing apparatus

A method and apparatus for conditioning a slurry used in a chemical mechanical polishing apparatus is disclosed. Megasonic generators are provided along the piping network between a slurry reservoir and the CMP apparatus. A megasonic generator may also be placed adjacent to the slurry reservoir. The megasonic generators discourage the formation of agglomerate particles, which in turn reduces the number of defects caused by the large particles in the slurry.

Stabilization of slurry used in chemical mechanical polishing of

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Hsinchu, Taiwan

Jen-Chieh Tung