Lam Research Corporation

Micron Technology Incorporated

Jeffrey V Musser

David A Cathey

Robert Guerra

James L Dale

Stephen F Powell

Timothy R Webb

William J Crane

Eric A Powell

David R Arnett

John C Freeman

A method in a plasma processing chamber for etching through a selected portion of a metallization layer of a wafer's layer stack. The method includes the step of etching at least partially through the metallization layer of the layer stack with an etchant source gas that consists essentially of chlorine and nitrogen. In another embodiment, the metallization layer comprises aluminum, and the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 10:1. More preferably, the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 4:1 and preferably ranges from about 1:1 to about 2:1.

High density plasma etching of metallization layer using chlorine and

A method in a substrate processing chamber for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate. The method includes etching at least partially through the conductive layer using a first etch recipe to form a top portion of the conductive feature. The method further includes thereafter etching at least partially through a remaining thickness of the conductive layer using a second etch recipe different from the first etch recipe to form a bottom portion of the conductive feature. The bottom portion is disposed below the top portion. The second etch recipe is configured to yield a sloped etch foot in the bottom portion of the conductive feature.

Methods and apparatus for etching a conductive layer to improve yield

A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.

Temperature controlled anode for plasma dry etchers for etching

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Boise, ID, United States of America

Jeffrey V Musser