Applied Materials, Inc.

Lam Research Corporation

Other

Living Media, LLC

Jeffrey S Marks

Kenneth S Collins

Michael Robert Rice

Rajinder Dhindsa

David Walter Groechel

Peter R Keswick

Chan-Lon Yang

Wenbing Yang

Craig A Roderick

Thorsten B Lill

Samantha SiamHwa Tan

Keren Jacobs Kanarik

Tetsuya Ishikawa

John R Trow

Dennis Michael Hausmann

Gerald Z Yin

Yang Pan

Taeseung Kim

Harmeet Singh

Richard Alan Gottscho

Nicolas J Bright

Jerry Yuen-Kui Wong

Jay D Pinson, Ii

Meihua Shen

Masato M Toshima

Douglas Buchberger

Jerry Yuen Wong

Jon Mohn

Alexander Kabansky

Adrien Lavoie

Artur Kolics

Bhadri N Varadarajan

George Andrew Antonelli

Sirish K Reddy

Samantha Siamhwa Tan

Thomas Joseph Knisley

Lawrence Chang-Lai Lei

Kam S Law

S M Reza Sadjadi

Robert D Tolles

David N Wang

Jengyi Yu

Boris Volosskiy

Spyros J Lazaris

Da Li

Daniel Peter

Timothy William Weidman

Yuen-Kui (Jerry) Wong

Richard Janek

Tadeusz Peter Matuchniak

Yiwen Fan

Nicholas J Dauderman

Richard Stephan Wise

Dan Maydan

Lawrence C Lei

Samantha S H Tan

Jian Ding

William L Guthrie

Joshua Chiu-Wing Tsui

Tsungnan Cheng

Prithu Sharma

Clifford Duvernois

Eric A Hudson

Eric H Lenz

Felix Leib Kozakevich

Reza Arghavani

Mukund Srinivasan

Lumin Li

Gerald Zheyao Yin

Brian K McMillin

Norm Shendon

Camelia Rusu

Zhisong Huang

Aaron Eppler

Benjamin A Bonner

Semyon Spektor

Victor Belitsky

William R Bartlett

Raj Dhindsa

James C Nystrom

Dave Trussell

Kazuo Nojiri

Samantha Sh Tan

Chan Lon Yang

Ivan A Ocanada

Dan Mayden

Tomihito Ohba

Joshua C-w Tsui

Jim Tietz

Rose K Marks

John R Espenshied

Reza S M Sadjadi

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Photoresist development with halide chemistries

A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Plasma etching chemistries of high aspect ratio features in dielectrics

A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below &#x2212;20&#xb0; C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Vacuum-integrated hardmask processes and apparatus

Provided herein are methods and related apparatus that facilitate patterning by performing highly non-conformal (directional) deposition on patterned structures. The methods involve depositing films on a patterned structure, such as a hard mask. The deposition may be both substrate-selective such that the films have high etch selectivity with respect to an underlying material to be etched and pattern-selective such that the films are directionally deposited to replicate the pattern of the patterned structure. In some embodiments, the deposition is performed in the same chamber as a subsequent etch is performed. In some embodiments, the deposition may be performed in a separate chamber (e.g., a PECVD deposition chamber) that is connected to the etch chamber by a vacuum transfer chamber. The deposition may be performed prior to or at selected intermittences during at etch process. In some embodiments, the deposition involves multiple cycles of a deposition and treatment process.

Directional deposition on patterned structures

Apparatuses for etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Apparatuses are suitable for fabricating MRAM structures and may be used to integrate ALD and ALE processes without breaking vacuum.

Dry plasma etch method to pattern MRAM stack

A media management framework comprises an integrated architecture and online networking service for aggregating a user's various media files to enable a customized distribution of those media files. User media files are processed, archived, aggregated, and distributed for display in customized story streams. Additional media files are pulled from other sources, such as social media feeds and the public domain, to create a customized distribution and a comprehensive user experience centered on a user's media files based on specified user preferences. The customized distribution also includes modifying story streams based on learning of additional user preferences from continued user interaction and continuously grouping inference associations from one or more of activities, people, objects, times, dates, and locations.

Integrated architecture and network for arrangement and delivery of media

Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.

Methods of etching and smoothening films by exposing to a halogen-containing plasma and an inert plasma within a bias window in cycles are provided. Methods are suitable for etching and smoothening films of various materials in the semiconductor industry and are also applicable to applications in optics and other industries.

Ale smoothness: in and outside semiconductor industry

Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)

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Newport Coast, CA, United States of America

Jeffrey S Marks