Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Dow Global Technolgoies LLC

Rodel Holdings, Inc.

Jeffrey James Hendron

Bainian Qian

Tony Quan Tran

James T Murnane

Marty W DeGroot

Fengji Yeh

John Gifford Nowland

Michelle K Jensen

Jeffrey Robert Stack

David B James

John Vu Nguyen

Jeffrey Borcherdt Miller

Yuhua Tong

Gregory P Muldowney

George C Jacob

Julia Kozhukh

Teresa Brugarolas Brufau

Diego Lugo

Marc R Stack

Andrew Wank

David Michael Veneziale

Angus Repper

Lee Melbourne Cook

Joseph K So

Matthew Richard Van Hanehem

Mohammad T Islam

Robert A Brady

Carolina L Elmufdi

Brian T Cantrell

George McClain

Christopher Alan Young

Durron Andre Hutt

Darrell String

Kathleen McHugh

T Todd Crkvenac

Arthur Richard Baker, Iii

Stephen G Pisklak

Russell A Walls, Jr

Stephen P Carter

Kenneth Vavala

Patricia Connell

The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

Debris-removal groove for CMP polishing pad

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad, the rotating polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The polishing regions are circular sectors defined by two adjacent radial feeder grooves. The radial feeder grooves extend from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad adjusts polishing by either increasing or decreasing residence time of the polishing fluid under the wafer.

Controlled residence CMP polishing method

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves include a series of biased grooves connecting a pair of adjacent radial feeder grooves. A majority of the biased grooves have either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad increases polishing or planarizing removal rate of the wafer.

High-rate CMP polishing method

The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix and radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region includes a series of spaced non-isosceles trapezoid groove structures having parallel base segments connecting two adjacent radial feeder grooves to form leg segments. The series of non-isosceles trapezoid groove structures extend from adjacent the outer edge toward the center of the polishing pad with the perimeter of the series of trapezoid structures also being a trapezoid.

Trapezoidal CMP groove pattern

The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region including a series of biased grooves that connects a pair of adjacent radial feeder grooves. A majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias for directing polishing fluid toward the outer edge of the polishing pad.

Biased pulse CMP groove pattern

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. The series of biased grooves separate a land area and have inner walls closer to the center and outer walls closer to the outer edge. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations polishes or planarizes the wafer with land areas wet by the overflowing polishing fluid.

Uniform CMP polishing method

The present invention provides a chemical mechanical (CMP) polishing pad with a top surface, one or more apertures adapted to receive an endpoint detection window, an underside having a recessed portion and having one or more flanged endpoint detection windows (windows), each window having a flange adapted to fit snugly into the recessed portion of the underside of the polishing layer, the flange having a thickness slightly less than the depth of the recessed portion of the polishing layer (to allow for adhesive), having a detection area that fits snugly into an aperture in the polishing layer so that its top surface that lies substantially flush with the top surface of the polishing layer.

Flanged optical endpoint detection windows and CMP polishing pads containing them

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Method of making composite polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

The present invention provides methods for making a pre-conditioned chemical mechanical (CMP) polishing pad having a pad surface microtexture effective for polishing comprising grinding the surface of the CMP polishing pad having a radius with a rotary grinder while it is held in place on a flat bed platen surface, the rotary grinder having a grinding surface disposed parallel to or substantially parallel to the surface of the flat bed platen and made of a porous abrasive material, wherein the resulting CMP polishing pad has a surface roughness of from 0.01 &#x3bc;m to 25 &#x3bc;m, Sq. The present invention also provides a CMP polishing pad having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad.

Method to shape the surface of chemical mechanical polishing pads

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of &#x2266;6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of &#x2267;10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Chemical mechanical polishing pad composite polishing layer formulation

A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.

Chemical mechanical polishing pad with polishing layer and window

A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 &#x3bc;m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer

A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 &#x3bc;m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.

Soft and conditionable chemical mechanical window polishing pad

A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 &#x3bc;m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

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Elkton, MD, United States of America

Jeffrey James Hendron