Veeco Instruments Inc.

Bridgelux Incorporated

Toshiba Techno Center Inc.

Jeffrey C Ramer

Eric Armour

Michael Murphy

Vahid S Moshtagh

Richard Hoffman

Jonathan Cruel

Lev Kadinski

Steven D Lester

Ling Zhang

In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

Alkyl push flow for vertical flow rotating disk reactors

In a rotating disk reactor () for growing epitaxial layers on substrate (), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis () may include a higher concentration of a reactant gas () than the gas directed toward portions of the disk close to the axis (), so that portions of the substrate surfaces at different distances from the axis () receive substantially the same amount of reactant gas () per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

A shower head for a chemical vapor deposition chamber can have a housing, a plurality of bosses formed upon the housing, and an inside cover. The bosses can have bores formed therethrough. The inside cover can be attached to the bosses and can have apertures formed therein such that the apertures are generally contiguous with the bores. The housing, the bosses, and the inside cover cooperate to communicate water through the shower head. The water can cool the shower head to a temperature that is substantially lower than the temperature of other parts of the chemical vapor deposition chamber, e.g., the susceptor thereof.

Machine CVD shower head

A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.

High brightness LED utilizing a roughened active layer and conformal cladding

A shower head for a chemical vapor deposition chamber can comprise a plurality of first injectors for a first reactant gas and a plurality of second injectors for a second reactant gas. The first and second injectors can be interspersed among one another so as to enhance control of the mixing and delivery of reactant gases within the chemical deposition chamber. Cooling water can be communicated through a plurality of gun drilled bores formed intermediate injectors of the shower head. In this manner, enhanced control of the mixing and delivery of reactant gases can be provided.

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Sunnyvale, CA, United States of America

Jeffrey C Ramer