Lam Research Corporation

Jeff Gasparitsch

Erik H Engdahl

Cangshan Xu

Michael R Vogtmann

Robert F Taff

Kenneth J Bahng

Paul Stasiewicz

Chris Frederickson

Gene Hempel

A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Apparatus for controlling leading edge and trailing edge polishing

A method and apparatus for conditioning a polishing pad are described. The method includes steps of providing a chemical mechanical polishing apparatus having a polishing region and a conditioning region; cycling a polishing member through the apparatus; contacting the polishing member in the conditioning region with a conditioning member; and conditioning the polishing member. The apparatus includes an end effector adapted to receive a conditioning member, the end effector being attached to an arm that can be moved horizontally and vertically, and a strain gauge that monitors the force applied to a polishing member.

Conditioning mechanism in a chemical mechanical polishing apparatus for semiconductor wafers

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Fremont, CA, United States of America

Jeff Gasparitsch