Semes Co., Ltd.

Other

Jee Young Lee

Ji Hoon Jeong

Young Dae Chung

Tae Shin Kim

Won Geun Kim

Won-Geun Kim

Pil Kyun Heo

Jung Suk Goh

Ye Rim Yeon

Se Hoon Oh

Hyun Yoon

Do Yeon Kim

Kuk Saeng Kim

Young Je Um

Kwang Sup Kim

Hyun Goo Park

Do Youn Lim

Cheng Bin Cui

Yong Jun Seo

Yoon Ki Sa

Jae Seong Lee

Byeong Geun Kim

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

Apparatus for treating substrate and method for treating substrate

The present disclosure provides a substrate treating apparatus. The substrate treating apparatus includes a support unit that supports a substrate, and a laser unit that irradiates a laser beam to the substrate supported by the support unit, the laser unit includes an irradiation member that irradiates the laser beam, a lens disposed on a travel path of the laser beam irradiated by the irradiation member to be rotatable, and a reflection member having an inclined surface for changing the travel path of the laser beam that passed through the lens.

Substrate treating apparatus

The present disclosure provides a substrate treating apparatus. The substrate treating apparatus includes a support unit that supports a substrate, and a heating unit that irradiates a beam to the substrate and heat the substrate, and the heating unit further includes an irradiation part that irradiates the beam, and a rotation part that rotates the beam.

Disclosed is a substrate treatment apparatus including a rotation unit that supports and rotates a substrate, a chemical discharge unit that discharges a chemical solution to the rotation unit, a chemical recovery unit disposed close to the rotation unit and configured to recover the chemical solution scattering from the rotation unit, and a laser irradiation unit that applies a laser beam to the substrate and heats the substrate.

Substrate treatment apparatus

Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

Substrate heating unit, substrate processing apparatus, and substrate processing method

A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

Apparatus for and method of treating substrate

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

Disclosed in one embodiment of the present invention is a method for a user staying in a first country to be authorized in advance, before entering a second country which is different from the first country, to use a network service on a user terminal in the second country, without buying a local USIM after arriving in the second country or using a roaming service.

Growing community of inventors

Incheon, South Korea

Jee Young Lee